The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.9 Optical properties and light-emitting devices

[11p-A25-1~15] 13.9 Optical properties and light-emitting devices

Wed. Mar 11, 2015 1:30 PM - 5:30 PM A25 (6A-218)

1:45 PM - 2:00 PM

[11p-A25-2] Preparation of Europium-doped cubic GaN grown on GaAs(100) by radio frequency MBE

〇Yuki Koyama1, Shinji Yudate1, Masanao Tadokoro1, Kazuma Takeuchi1, Akira Miyata1, Sho Shirakata1 (1.Faculty of Engineering, Ehime Univ.)

Keywords:Gallium nitride,europium,RF-MBE