Oral presentation

[11a-A25-1~10] 13.9 Optical properties and light-emitting devices

Wed. Mar 11, 2015 9:30 AM - 12:15 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

▲ [11a-A25-1] Synthesis of A₃B₈X₁₅-type new oxynitride phosphors starting from a single crystal composition

〇(P)Xiaojun Wang¹, Rong-Jun Xie¹, Naoto Hirosaki¹, Takashi Takeda¹, Shiro Funahashi¹ (1.NIMS)

9:45 AM - 10:00 AM

▲ [11a-A25-2] Moisture-induced thermal degradation of red-emitting CaAlSiN₃:Eu

〇Rong-Jun Xie¹, Jie Zhu^1,², Yujin Cho^1,³, Takayuki Suehiro¹, Takeda Takashi¹, Naoto Hirosaki¹ (1.NIMS, 2.Nanjin Univ Sci Tech, 3.Uni Tsukuba)

10:00 AM - 10:15 AM

[11a-A25-3] The properties of solid state lighting devices using the SiAlON phosphor glass film

〇Kenichi Yoshimura¹, Kazunori Annen¹, Hiroshi Fukunaga¹, Masamichi Harada¹, Makoto Izumi¹, Kohsei Takahashi², Tetsuo Uchikoshi², Naoto Hirosaki² (1.Sharp, 2.NIMS)

10:15 AM - 10:30 AM

[11a-A25-4] Two-Wavelength Excited Photoluminescence in Ba₃Si₆O₁₂N₂:Eu²⁺Phosphor -Dependence on AGE Pre Irradiation Time-

〇Yosuke Kotsuka¹, Tingting Li¹, Takeshi Hukuda¹, Zentaro Honda¹, Tomoyuki Kurushima², Norihiko Kamata¹ (1.Saitama Univ, 2.Mitsubishi Chemical)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[11a-A25-5] Crystal Structure Analysis of the A₃M₈X₁₂-type New Green Nitride Phosphor

〇Shiro Funahashi¹, Takashi Takeda¹, Naoto Hirosaki¹, Rong-Jun Xie¹ (1.NIMS)

11:00 AM - 11:15 AM

[11a-A25-6] Luminescence Property of A₃B₈X₁₂-type New Green Nitride Phosphor

〇Takashi Takeda¹, Naoto Hirosaki¹, Shiro Funahashi¹, Rong-Jun Xie¹ (1.NIMS)

11:15 AM - 11:30 AM

[11a-A25-7] CL Observation of Powder Synthesized A₃B₈X₁₂-type Novel Green Nitride Phosphor

〇Kousei Takahasi¹, Yujin Cho^1,², Takashi Takeda¹, Shiro Funahashi¹, Rong-Jun Xie¹, Takashi Sekiguchi^1,², Naoto Hirosaki¹ (1.NIMS, 2.Tsukba Univ.)

11:30 AM - 11:45 AM

▲ [11a-A25-8] Microscopic approach for optimizing the growth conditions of LaAl(Si_6-zAl_z)(N_10-zO_z)(z~1):Ce³⁺ blue phosphor

〇(DC)Yujin Cho^1,², Kohsei Takahashi², Benjamin Dierre², Rong-Jun Xie², Naoto Hirosaki², Takashi Sekiguchi^1,² (1.Tsukuba Univ., 2.NIMS)

11:45 AM - 12:00 PM

[11a-A25-9] Luminescence from both sites of Sr₂Si₇Al₃ON₁₃:Ce

〇Keiko Albessard¹, Kunio Ishida¹, Yumi Fukuda¹, Masahiro Kato¹ (1.Toshiba Corporation)

12:00 PM - 12:15 PM

[11a-A25-10] Direct observation of luminescent sites in Sr₂Si₇Al₃ON₁₃:Ce

〇Kunio Ishida¹, Manabu Hoshino², Shunsuke Nozawa², Shinichi Adachi², Keiko Albessard¹, Yumi Fukuda¹, Masahiro Kato¹ (1.Toshiba Corporation, 2.IMSS, KEK)

Oral presentation

[11p-A25-1~15] 13.9 Optical properties and light-emitting devices

Wed. Mar 11, 2015 1:30 PM - 5:30 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[11p-A25-1] Visible photoluminescence from ZnO:Er films sputter-deposited on sapphire C-planes

〇Housei Akazawa¹, Shinojima Hiroyuki² (1.NTT DIC, 2.Kurume NCT)

1:45 PM - 2:00 PM

[11p-A25-2] Preparation of Europium-doped cubic GaN grown on GaAs(100) by radio frequency MBE

〇Yuki Koyama¹, Shinji Yudate¹, Masanao Tadokoro¹, Kazuma Takeuchi¹, Akira Miyata¹, Sho Shirakata¹ (1.Faculty of Engineering, Ehime Univ.)

2:00 PM - 2:15 PM

▲ [11p-A25-3] Growth and Characterization of GaN/Eu-Doped GaN Nanolayer Structures by Low-Temperature Organometallic Vapor Phase Epitaxy

〇Wanxin ZHU¹, Dolf Timmerman¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

[11p-A25-4] Deep-Level Transient Spectroscopy Study of Trap Levels in Eu,O-codoped GaN

〇TASUKU SHIGEMUNE¹, ATSUSHI KOIZUMI¹, TAKANORI KOJIMA¹, YASUFUMI FUJIWARA¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

△ [11p-A25-5] In-Plane Compressive Strain Dependence of Photoluminescence Properties in Eu-Doped GaN

〇(M2)Tomohiro Inaba¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

[11p-A25-6] Enhancement of emission efficiency of GaN:Eu red LED: Resonant charge injection using pulse drive

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

3:00 PM - 3:15 PM

[11p-A25-7] “Uluminescent” processes in rare-earth doped glasses: Correlation of luminescence quenching with localization/delocalization of defect charges

〇Masashi Ishii¹, Shingo Fuchi², Yoshikazu Takeda³ (1.NIMS, 2.Aoyama Univ., 3.NISRI)

Break （3:15 PM - 3:30 PM）

3:30 PM - 3:45 PM

△ [11p-A25-8] Extreme high sensitization effect of Yb³⁺ in Er_xYb_yY_2-x-ySiO₅ crystal

〇Fumiya Kondo¹, Hideo Isshiki¹ (1.Univ. of Electro-Communications)

3:45 PM - 4:00 PM

[11p-A25-9] Relaxation processes caused by energy transfer in Er_xY_2-xSiO₅ crystalline compounds

〇Hideo Isshiki¹ (1.Univ. of Electro-Comm.)

4:00 PM - 4:15 PM

[11p-A25-10] Determination of band structures of the (Er_xSc_1-x)₂O₃ films grown on Si(111) by MBE

〇Hiroo Omi^1,², Logan Blackstad¹, Takehiko Tawara^1,² (1.NTT BRL, 2.NTT NPC)

4:15 PM - 4:30 PM

[11p-A25-11] Photo Luminescence properties of Sn doped SiON films

〇(M1C)Akira Kawamata¹, Hiroki Takeuchi¹, Takuya Suzuki¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

4:30 PM - 4:45 PM

[11p-A25-12] Impact of Impurity Doping on Electroluminescence Properties of Multiply-Stacked Si Quantum Dots

Takahisa Yamada¹, 〇Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (1.Nagoya Univ., 2.Hiroshima Univ.)

4:45 PM - 5:00 PM

△ [11p-A25-13] Enhancement of Photoluminescence Intensity of Adsorbed Molecules by Silicon Nanoparticles

〇Masanori Maeda¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (1.ISIR, Osaka Univ.)

5:00 PM - 5:15 PM

[11p-A25-14] Irradiation light wavelength dependence of SOQ MOSFET characteristics

〇Yuusuke Nishizawa¹, Tatuya Yamada¹, Toshiaki Higashi¹, Yoshikata Nakajima¹, Taturo Hanajiri¹ (1.Bio-Nano Electronics Research Centre Toyo Univ.)

5:15 PM - 5:30 PM

▲ [11p-A25-15] Monitoring Porous Silicon Photo-Dissolution in Hydrofluoric Acid

〇Bernard Gelloz¹, Toshifumi Oya², Lianhua Jin² (1.Nagoya Univ., 2.Yamanashi Univ.)

Oral presentation

[12a-A25-1~13] 13.9 Optical properties and light-emitting devices

Thu. Mar 12, 2015 9:00 AM - 12:30 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A25-1] Improvement of Luminescent Characteristics by Post-Deposition Annealing

〇(M1)Takayoshi Adachi¹, Hideki Kawaguchi¹, Tadashi Ishigaki², Koutoku Ohmi^1,³ (1.Tottori Univ., 2.TiFREC, 3.TEDREC)

9:15 AM - 9:30 AM

[12a-A25-2] Color tuning of (Y,Ce)₄(SiS₄)₃ phosphor by Ga addition

〇(P)Yasushi Nanai¹, Yamato Tatsushi¹, Okuno Tsuyoshi¹ (1.The Univ. of Electro-Communications)

9:30 AM - 9:45 AM

△ [12a-A25-3] Luminescent properties of alkali-earth sulfide phosphors - Electronic state analysis by first principles calculation and ligand field theory -

〇Hiroshi Nakano¹, Masahito Oh-e¹ (1.Sharp Corp.)

9:45 AM - 10:00 AM

△ [12a-A25-4] Study on thermal quenching properties of Eu²⁺ doped phosphors by QSPR

〇Tomoya Aoki¹, Hiromitsu Takaba¹ (1.Kogakuin Univ.)

10:00 AM - 10:15 AM

[12a-A25-5] Consideration of 570nm emission of Sr₃MgSi₂O₈:Eu²⁺blue phosphor by XPS

〇(B)Kenta Gotsu¹, Hayato Miyagawa¹, Kousaku Sone¹, Yoshiaki Kamigaki², Shinji Okamoto³, Naoshi Takahashi⁴ (1.Kagawa Univ., 2.EBL, 3.Tokyo Kagaku Inst., 4.Edu Kagawa Univ.)

10:15 AM - 10:30 AM

△ [12a-A25-6] Highly Sensitive Mechanoluminescence Properties of SrAl₂O₄ Fibers

〇Akihito Yoshida¹, Tomomi Matsuo², Luyang Yuan¹, Etsuko Kawasaki¹, Yuki Fujio¹, Chao-Nan Xu^1,² (1.AIST, 2.Kyushu Univ.)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[12a-A25-7] Infrared Spectroscopy of Photo-Induced Defects in Ce³⁺:GAGG Crystals

〇(B)Ryota Inaba¹, Kitaura Mamoru¹, Kamada Kei², Kurosawa Syunsuke³, Ohnishi Akimasa¹, Sasaki Minoru¹, Hara Kazuhiko⁴ (1.Yamagata Univ., 2.Tohoku Univ. NICHe, 3.Tohoku Univ. IMR, 4.Shizuoka Univ. RIE)

11:00 AM - 11:15 AM

[12a-A25-8] Temperature Dependence of Photoluminescence Properties of Ce, Mg co-doped (La, Gd)₂Si₂O₇ single crystal

〇Rikito Murakami¹, Shunsuke Kurosawa^1,², Vitezslav Jary³, Mamoru Kitaura⁴, Yasuhiro Shoji^1,⁵, Yamanoi Kohei⁶, Ren Arita⁶, Yuui Yokota², Jan Pejchal^2,³, Yuji Ohashi¹, Kei Kamada^2,⁵, Nobuhiko Sarukura⁶, Akimasa Ohnishi⁴, Martin Nikl³, Akira Yoshikawa^1,^2,⁵ (1.Tohoku Univ., 2.Tohoku Univ. NICHe, 3.Inst. of Phis. (AS CR), 4.Yamagata Univ., 5.C&A Corp., 6.Osaka Univ. ILE)

11:15 AM - 11:30 AM

[12a-A25-9] Optical properties of a novel red persistent luminescence phosphor (Zn_yMg_1-y)GeO₃:Mn²⁺-Eu³⁺ with Eu³⁺ as sensitizer

〇TOMOHIRO KAYUMI¹, Yumiko Katayama¹, Jumpei Ueda¹, Setsuhisa Tanabbe¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

△ [12a-A25-10] Deep red persistent luminescence properties on LaAlO₃:Cr³⁺ perovskite phosphor

〇(P)Yumiko Katayama¹, Hiroaki Kobayashi¹, Setsuhisa Tanabe¹ (1.Kyoto Univ.)

11:45 AM - 12:00 PM

[12a-A25-11] Wavelength Conversion Nano-phosphor films for solar panels

〇(M1)Ryosuke Sakata¹, Naoki Doi¹, Tadashi Ishigaki², Koutoku Ohmi^1,³, Hiroshi Okura⁴ (1.Tottori Univ., 2.TiFREC, 3.TEDREC, 4.Merck Ltd.)

12:00 PM - 12:15 PM

△ [12a-A25-12] Coating effect of ZnS shell layer for CuInS₂ and AgInS₂/ZnS quantum dot

〇Masatomo Hishinuma¹, Tomokazu Kurabayashi¹, Takesi Hukuda¹, Norihiko Kamata¹, Zentaro Honda¹ (1.Saitama Univ)

12:15 PM - 12:30 PM

[12a-A25-13] Suppressed Sublimation of Dye Nanoparticles Embedded into Silica Glass Thin Film

〇tatsuki yamaki¹, tomokazu kurabayashi¹, takeshi fukuda¹, norihiko kamata¹, zentaro honda¹ (1.Saitama Univ.)

Oral presentation

[12p-A25-1~11] 13.9 Optical properties and light-emitting devices

Thu. Mar 12, 2015 2:00 PM - 5:00 PM A25 (6A-218)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[12p-A25-1] Photoluminescence properties of Tb₃Ga₅O₁₂:Eu³⁺ phosphor

〇kenji sawada¹, sadao adachi¹ (1.Gunma Univ.)

2:15 PM - 2:30 PM

[12p-A25-2] Synthesis and characterization of Eu³⁺ activated CaTiO₃ phosphor

〇(B)Takuya Orihashi¹, Takaaki Arai¹, Sadao Adachi¹ (1.Gunma Univ.)

2:30 PM - 2:45 PM

[12p-A25-3] Effects of (Ce³⁺, Sn²⁺) codoping in KCl

〇(M1)Yuki Tosaka¹, Sadao Adachi¹ (1.Gunma Univ.)

2:45 PM - 3:00 PM

[12p-A25-4] Synthesis and evaluation of Mn⁴⁺-activated ZnSnF₆·6H₂O red phosphor

〇(M1)Ryosuke Hoshino¹, Sadao Adachi¹ (1.Gunma Univ.)

3:00 PM - 3:15 PM

[12p-A25-5] Ultrafast Radiative Decay Due to Long-Range Coherent Coupling of Light and Polarization Waves in a ZnO Crystalline Film

〇Masayoshi Ichimiya^1,², Takayuki Umakoshi², Subaru Saeki², Takashi Kinoshita³, Hajime Ishihara³, Masaki Kawakami⁴, Masaaki Nakayama⁴, Masaaki Ashida² (1.Univ. of Shiga Pref., 2.Osaka Univ., 3.Osaka Pref. Univ., 4.Osaka City Univ.)

3:15 PM - 3:30 PM

[12p-A25-6] Fabrication and optical properties of CdSe quantum dots by using alternate beam supplying method II

〇Yasuto Kawasaki¹, Minoru Yoneta¹, Satoru Seto², Makoto Honda³, Tomoyasu Taniyama⁴ (1.Okayama Univ. of Science, 2.Isikawa National Col. of Technology, 3.Naruto Univ. of Education, 4.Tokyo Inst. of Technology)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[12p-A25-7] Fabrication of GaAs Quantum Nanodisk LED by Combination of Bio-template and Neutral Beam Etching

〇Akio Higo¹, Takayaki Kiba^2,⁷, Cedric Thomas³, Yunpeng Wang⁴, Ichiro Yamashita^5,⁷, Masakazu Sugiayma⁶, Yoshiaki Nakano⁶, Akihiro Murayama^2,⁷, Seiji Samukawa^1,^3,⁷ (1.WPI-AIMR, Tohoku Univ., 2.IST, Hokkaido Univ., 3.IFS, Tohoku Univ., 4.RCAST, the Univ. of Tokyo, 5.NAIST, 6.School of Eng., the Univ. of Tokyo, 7.JST-CREST)

4:00 PM - 4:15 PM

[12p-A25-8] Photoluminescence and electroluminescence properties of La₂Ti₂O₇:Pr

〇Toru Kyomen¹, Shido Saito¹, Minoru Hanaya¹, Hiroshi Takashima² (1.Gunma Univ., 2.AIST)

4:15 PM - 4:30 PM

[12p-A25-9] Low-voltage emission observed for thin-film-type and powder-type Electroluminescence devices based on a perovskite-type oxide phosphor of Ca_0.6Sr_0.4TiO₃:Pr –2–

〇Keiichi Ikegami¹, Yuuki Nakagawa², Noboru Miura², Yukiya Hakuta¹, Hiroshi Takashima¹ (1.AIST, 2.Meiji Univ.)

4:30 PM - 4:45 PM

[12p-A25-10] TFEL devices coated with BaTiO₃ nano particles

〇Shinya Hatayama¹, Yuki Itagaki¹, Haruki Teramukai¹, Tadashi Ishigaki², Ohmi Koutoku^1,³ (1.Tottori Univ., 2.TiFREC, 3.TEDREC)

4:45 PM - 5:00 PM

[12p-A25-11] Characteristic of Powder EL Device using Graphene to the Emission Side Electrode

Qiyan Zhang¹, Takamasa Okubo², Ryuji Okumura², Yo Ichikawa², 〇Toshifumi Satoh¹ (1.Tokyo Polytec. Univ., 2.NITech)

Poster presentation

[13p-P18-1~21] 13.9 Optical properties and light-emitting devices

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P18 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:30 PM - 6:30 PM

[13p-P18-1] H₂ concentration dependence of Reduction effect of Eu doped KSrPO₄Phosphor by Inductively Coupled Plasma

〇Masuo Takachi¹, Kohei Ymagami¹, Toru Sasaki¹, Takashi Kikuchi¹, Ariyuki Kato¹ (1.Nagaoka Univ. of Tech.)

4:30 PM - 6:30 PM

[13p-P18-2] Fabrication of multilayer inorganic EL device by electrophoretic deposition using perovskite oxides

Hiroki Komagata¹, 〇Ariyuki Kato¹ (1.Nagaoka Univ. of Tech.)

4:30 PM - 6:30 PM

[13p-P18-3] Photoluminescence property of CaY₂Si₂S₈:Ce³⁺,Eu²⁺ phosphor for white light LED

〇Tomu Tanabe¹, Ariyuki Kato¹ (1.Nagaoka Univ. of Tech.)

4:30 PM - 6:30 PM

[13p-P18-4] Sintering process effects on high pressure-phase of blue SrO:Eu phosphor

〇Keiji Komatsu¹, Atsushi Nakamura^1,², Shigeo Ohshio¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.ChubuChelest Co.,Ltd.)

4:30 PM - 6:30 PM

[13p-P18-5] Syntheses of Mn-activated Phosphors for Plant Cultivation

〇Yoshiko Fujita¹, Takashi Kunimoto¹ (1.Tokushima Bunri Univ.)

4:30 PM - 6:30 PM

[13p-P18-6] Tuning of the absorption band of Y₄(SiS₄)₃:Tb phosphor by Ge doping

〇Chihiro Suzuki¹, Yasushi Nanai¹, Tsuyoshi Okuno¹ (1.The Univ. of Electro-Communications)

4:30 PM - 6:30 PM

[13p-P18-7] Optical properties of red sulfide phosphor La₂S₃:Ce³⁺

〇Yu Murosaki¹, Yasushi Nanai¹, Tsuyoshi Okuno¹ (1.The Univ. of Electro-Communications)

4:30 PM - 6:30 PM

[13p-P18-8] Time-Resolved Photoluminescence of Rare-Earth Thiosilicate Phosphors

〇Yousuke Suzuki¹, Nanai Yasushi¹, Okuno Tsuyoshi¹ (1.UEC)

4:30 PM - 6:30 PM

[13p-P18-9] Site-selective spectroscopy of Ce³⁺ in (La,Y)₆Si₄S₁₇

〇(P)Yasushi Nanai¹, Murosaki Yu¹, Okuno Tsuyoshi¹ (1.The Univ. of Electro-Communications)

4:30 PM - 6:30 PM

[13p-P18-10] Development of intense near-infrared mechanoluminescence from Nd³⁺-doped Sr₃Sn₂O₇

〇(M1)Hirotaka Ohshiro^1,², Dong Tu^1,², Yuki Fujio², Chao-Nan Xu^1,^2,³ (1.Kyushu Univ., 2.AIST, 3.Kyushu Univ. WPI-I2CNER)

4:30 PM - 6:30 PM

[13p-P18-11] Photoacoustic Signal and Photoluminescence in Oxide Phosphors with Localized Luminescent Center

〇Keita Furukawa¹, Haruki Fukada¹, Atsushi A. Yamaguchi¹ (1.O.E.D.S. R&D Center, Kanazawa Inst. of Tech.)

4:30 PM - 6:30 PM

[13p-P18-12] Characterization on Luminescence of Up-Conversion Phosphor using the MOD method

〇Takanori Kubo¹, Isamu Shobu¹, Keito Ohyama¹, Toshihiro Nonaka¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

4:30 PM - 6:30 PM

[13p-P18-13] Luminescence Characterization of LaOF:Yb³⁺/Er³⁺ Up-Conversion Phosphor

〇Keito Oyama¹, Toshihiro Nonaka¹, Shin-Ichi Yamamoto¹ (1.Ryukoku Univ.)

4:30 PM - 6:30 PM

[13p-P18-14] Cu-In-S / ZnS Quantum dots Fabricated by Hot injection method

〇Takumi Miyagi¹, Ogawa Kosuke¹, Ngakubo Junki², Nagata Tomohiro², Shin-Ichi Yamamoto¹ (1.Ryukoku Univ., 2.ULVAC. Inc.)

4:30 PM - 6:30 PM

[13p-P18-15] Light-emitting Characterization of Synthesized Cu-In-S/ZnS Quantum Dots

〇Kosuke Ogawa¹, Takumi Miyagi¹, Junki Nagakubo², Tomohiro Nagata², Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.ULVAC.)

4:30 PM - 6:30 PM

[13p-P18-16] Fluorescence properties of P-doped (NH₄)₂SiF₆ particles

〇Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (1.Tokyo Denki Univ., 2.NIMS)

4:30 PM - 6:30 PM

[13p-P18-17] Light Emission Enhancement from Tensile-Strained Ge-on-Insulator (GOI) by CMP Thinning

〇hideaki hashimoto¹, Xuejun Xu¹, Kentarou Sawano¹, Takuya Matuizumi¹ (1.Tokyo City Univ.)

4:30 PM - 6:30 PM

[13p-P18-18] Influence of surface defects on photoluminescence of Eu³⁺-doped ZnO nanocrystals

〇Shunsuke Ando¹, Atsushi Ishizumi¹, Hisao Yanagi¹ (1.NAIST Materials)

4:30 PM - 6:30 PM

[13p-P18-19] Photoluminescent properties of core/shell CdS/ZnS:Mn nanocrystals with different dopant concentrations and positions

〇yusuke yanagisawa¹, atsushi ishizumi¹, hisao yanagi¹ (1.NAIST)

4:30 PM - 6:30 PM

[13p-P18-20] Surface morphologies and luminescence properties in Eu,O-codoped GaN grown with the O₂ or NO gases

〇Junichi Takatsu¹, Masaaki Matsuda¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

4:30 PM - 6:30 PM

[13p-P18-21] Simulation of dependence of two-photon absorption on linear polarization direction in InP

〇Shuhei Ri¹, Hiroyuki Bando¹, Masaki Oishi¹, Toshio Matsusue¹ (1.Chiba Univ.)

Sessions

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[11a-A25-1~10] 13.9 Optical properties and light-emitting devices

▲ [11a-A25-1] Synthesis of A3B8X15-type new oxynitride phosphors starting from a single crystal composition

▲ [11a-A25-2] Moisture-induced thermal degradation of red-emitting CaAlSiN3:Eu

▲ [11a-A25-8] Microscopic approach for optimizing the growth conditions of LaAl(Si6-zAlz)(N10-zOz)(z~1):Ce3+ blue phosphor

[11p-A25-1~15] 13.9 Optical properties and light-emitting devices

▲ [11p-A25-3] Growth and Characterization of GaN/Eu-Doped GaN Nanolayer Structures by Low-Temperature Organometallic Vapor Phase Epitaxy

△ [11p-A25-5] In-Plane Compressive Strain Dependence of Photoluminescence Properties in Eu-Doped GaN

△ [11p-A25-8] Extreme high sensitization effect of Yb3+ in ErxYbyY2-x-ySiO5 crystal

△ [11p-A25-13] Enhancement of Photoluminescence Intensity of Adsorbed Molecules by Silicon Nanoparticles

▲ [11p-A25-15] Monitoring Porous Silicon Photo-Dissolution in Hydrofluoric Acid

[12a-A25-1~13] 13.9 Optical properties and light-emitting devices

△ [12a-A25-3] Luminescent properties of alkali-earth sulfide phosphors - Electronic state analysis by first principles calculation and ligand field theory -

△ [12a-A25-4] Study on thermal quenching properties of Eu2+ doped phosphors by QSPR

△ [12a-A25-6] Highly Sensitive Mechanoluminescence Properties of SrAl2O4 Fibers

△ [12a-A25-10] Deep red persistent luminescence properties on LaAlO3:Cr3+ perovskite phosphor

△ [12a-A25-12] Coating effect of ZnS shell layer for CuInS2 and AgInS2/ZnS quantum dot

[12p-A25-1~11] 13.9 Optical properties and light-emitting devices

[13p-P18-1~21] 13.9 Optical properties and light-emitting devices

Authentication

▲ [11a-A25-1] Synthesis of A₃B₈X₁₅-type new oxynitride phosphors starting from a single crystal composition

▲ [11a-A25-2] Moisture-induced thermal degradation of red-emitting CaAlSiN₃:Eu

▲ [11a-A25-8] Microscopic approach for optimizing the growth conditions of LaAl(Si_6-zAl_z)(N_10-zO_z)(z~1):Ce³⁺ blue phosphor

△ [11p-A25-8] Extreme high sensitization effect of Yb³⁺ in Er_xYb_yY_2-x-ySiO₅ crystal

△ [12a-A25-4] Study on thermal quenching properties of Eu²⁺ doped phosphors by QSPR

△ [12a-A25-6] Highly Sensitive Mechanoluminescence Properties of SrAl₂O₄ Fibers

△ [12a-A25-10] Deep red persistent luminescence properties on LaAlO₃:Cr³⁺ perovskite phosphor

△ [12a-A25-12] Coating effect of ZnS shell layer for CuInS₂ and AgInS₂/ZnS quantum dot