[11p-A25-1~15] 13.9 光物性・発光デバイス

▲ [11p-A25-3] Growth and Characterization of GaN/Eu-Doped GaN Nanolayer Structures by Low-Temperature Organometallic Vapor Phase Epitaxy

〇Wanxin ZHU¹, Dolf Timmerman¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

キーワード：Rare earth,GaN