[11p-D1-1~17] 合同セッションＫ ワイドギャップ酸化物半導体材料・デバイス

▼ [11p-D1-16] Analysis of Oxygen vacancies in the Interface of amorphous InGaZnO / Siloxane passivation film by X-ray photoelectron spectroscopy

〇(M2)Chaiyanan Kulchaisit¹, Haruka Yamazaki¹, Juan Paolo Bermundo¹, Mami Fujii¹, Masahiro Horita¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Inst. of Sci. and Tech.)

キーワード：Siloxane passivation,InGaZnO,Thin-film transistor