[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

[11p-P2-12] Difference by the Oxide Fabrication Process of the Gamma-ray Irradiation Effect on SiC-MOSFETs

〇Satoshi Mitomo^{1, 2}, Takuma Matsuda^{1, 2}, Koichi Murata^{1, 2}, Takashi Yokoseki^{1, 2}, Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd)

Keywords:Silicon Carbide,Gamma-ray,MOSFET