9:00 AM - 9:15 AM
[12a-A21-1] Conduction mechanism of gate leakage current in AlTiO/InAlN/AlN/GaN metal-insulator-semiconductor field-effect transistor
Keywords:InAlN-GaN,AlTiO,Poole-Frenkel conduction
Oral presentation
13 Semiconductors » 13.8 Compound and power electron devices and process technology
Thu. Mar 12, 2015 9:00 AM - 12:30 PM A21 (6A-213)
9:00 AM - 9:15 AM
Keywords:InAlN-GaN,AlTiO,Poole-Frenkel conduction