9:30 AM - 11:30 AM
▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks
Keywords:InGaAs,Gate stacks,La2O3
Poster presentation
13 Semiconductors » 13.3 Insulator technology
Thu. Mar 12, 2015 9:30 AM - 11:30 AM P12 (Gymnasium)
9:30 AM - 11:30 AM
Keywords:InGaAs,Gate stacks,La2O3