[12a-P12-1~7] 13.3 Insulator technology

Thu. Mar 12, 2015 9:30 AM - 11:30 AM P12 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[12a-P12-1] First principles study on atomic defects in insulators of MONOS memory

〇Shirakawa Hiroki¹, Masaaki Araidai², Katsumasa Kamiya³, Kenji Shiraishi² (1.Univ. of Tsukuba, 2.Nagoya Univ, 3.Kanagawa Inst. of Tech)

9:30 AM - 11:30 AM

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

〇(M1)Shin Tanaka¹, Shinji Naito¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

9:30 AM - 11:30 AM

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

〇(D)SheikhRashel Ahmed¹, Shinji Naito², Hironori Shibayama³, Jyunya Nakamura³, Kyoteru Kobayashi^1,^2,³ (1.GRAD SCH S&T, Tokai Univ, 2.GRAD SCH Eng, Tokai Univ, 3.SCH Eng, Tokai Univ.)

9:30 AM - 11:30 AM

[12a-P12-4] Electrical Measurements of ALD-Al₂O₃ MOS Capacitors with Different Oxidants

〇RYO FUKUI¹, Yoshinori Nakamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech.FRC, 2.Tokyo Tech.IGSSE)

9:30 AM - 11:30 AM

[12a-P12-5] Penetration of ammonia molecules in silocon oxide layer with deficits

〇Tomoki Oku¹, Totsuka Masahiro¹, Shiga Toshihiko¹, Watanabe HItoshi¹ (1.Mitsubishi Electric)

9:30 AM - 11:30 AM

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

〇(D)ChihYu Chang^1,³, Osamu Ichikawa^2,³, Takenori Osada^2,³, Hisashi Yamada^2,³, Mitsuru Takenaka^1,³, Shinichi Takagi^1,³ (1.The Univ. of Tokyo, 2.Sumitomo Chemical, 3.JST-CREST)

9:30 AM - 11:30 AM

[12a-P12-7] Study on the formation of Al germanate on Ge substrate by radical-enhanced ALD

Tomoya Yokohira¹, 〇Kousei Yanachi¹, Byeonghak Yoo², Chiaya Yamamoto², Junji Yamanaka², Tetsuya Sato², Hiroshi Okamoto³, Yukio Fukuda¹ (1.Tokyo Univ. of Science, Suwa, 2.Univ. of Yamanashi, 3.Hirosaki Univ.)

Session information

[12a-P12-1~7] 13.3 Insulator technology

[12a-P12-1] First principles study on atomic defects in insulators of MONOS memory

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

[12a-P12-4] Electrical Measurements of ALD-Al₂O₃ MOS Capacitors with Different Oxidants

[12a-P12-5] Penetration of ammonia molecules in silocon oxide layer with deficits

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

[12a-P12-7] Study on the formation of Al germanate on Ge substrate by radical-enhanced ALD

Authentication

Session information

[12a-P12-1~7] 13.3 Insulator technology

[12a-P12-1] First principles study on atomic defects in insulators of MONOS memory

[12a-P12-2] Evaluation of hole trapping characteristics of MONOS structures using the constant current carrier injection method

▲ [12a-P12-3] Charge retention characteristics of charge trapping nonvolatile memories with silicon carbonitride (SiCN) dielectrics

[12a-P12-4] Electrical Measurements of ALD-Al2O3 MOS Capacitors with Different Oxidants

[12a-P12-5] Penetration of ammonia molecules in silocon oxide layer with deficits

▲ [12a-P12-6] Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks

[12a-P12-7] Study on the formation of Al germanate on Ge substrate by radical-enhanced ALD

Authentication

[12a-P12-4] Electrical Measurements of ALD-Al₂O₃ MOS Capacitors with Different Oxidants