[12a-P13-1~11] 13.5 Semiconductor devices and related techologies

[12a-P13-7] Sn concentration dependence on the performance of depletion-mode ultra-thin GeSn pMOSFETs

〇Tatsuro Maeda¹, Jevasuwan Wipakorn¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, Shu Miura², Masatoshi Tanaka², Nuno D. M. Santos³, Andre Vantomme³, J. -P. Locquet³, R. R. Lieten^{3, 4, 5} (1.AIST, 2.Yokohama Natl. Univ., 3.KU Lueven, 4.IMEC, 5.Entegris)

Keywords:germanium,Tin