[12a-P13-1~11] 13.5 Semiconductor devices and related techologies

[12a-P13-8] Fabrication of InGaAs channel tri-gate MOSFETs with MOVPE regrown source/drain

〇(M1)Haruki Kinoshita¹, Toru Kanazawa¹, Seiko Netsu¹, Yuichi Mishima¹, Yasuyuki Miyamoto¹ (1.Tokyo tech)

Keywords:MOSFET,InGaAs,multigate device