〇Koichi Nishi^1,³, Masafumi Yokoyama¹, Haruki Yokoyama^2,³, Takuya Hoshi^2,³, Hiroki Sugiyama^2,³, Mitsuru Takenaka^1,³, Shinichi Takagi^1,³ (1.Tokyo Univ., 2.NTT Device Technology Lab., 3.JST CREST)

10:15 AM - 10:30 AM

△ [11a-A23-6] Scaling the channel length of InGaAs-MOSFET

〇Kazuto Ohsawa¹, Yuichi Mishima¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[11a-A23-7] ON Current Density Enhancement of Nanowire Schottky Barrier Tunnel FET

〇Shuhei Asada¹, Hiroki Kosugiyama¹, Shoichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Xu Zhang¹, Taiyu Xu¹, Takashi Wakamizu¹, Takashi Matsukawa², Meishoku Masahara² (1.Waseda Univ., 2.AIST)

11:00 AM - 11:15 AM

[11a-A23-8] Fabrication and electrical characteristics of strained-SOI tunnel FETs

〇Daiki Ueda^1,², Minsoo Kim^1,², Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.Univ. of Tokyo, 2.JST CREST)

11:15 AM - 11:30 AM

▼ [11a-A23-9] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

〇Minsoo Kim^1,², Yuki K. Wakabayashi¹, Ryosho Nakane¹, Masafumi Yokoyama^1,², Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.The Univ. of Tokyo, 2.JST-CREST)

11:30 AM - 11:45 AM

[11a-A23-10] Performance improvement of planer type InGaAs Tunnel-FETs by introducing high In content InGaAs quantum well channels

〇(M2)SANGMIN JI^1,³, Osamu Ichikawa^2,³, Takenori Osada^2,³, Hisashi Yamada^2,³, Mitsuru Takenaka^1,³, Shinichi Takagi^1,³ (1.Tokyo Univ., 2.Sumitomo Chemical, 3.JST CREST)

11:45 AM - 12:00 PM

[11a-A23-11] Strain effect of vertical tunnel FET using Si/InGaAs heterounction

〇Katsuhiro Tomioka^1,², Fumiya Ishizaka¹, Eiji Nakai¹, Junichi Motohisa¹, Takashi Fukui¹ (1.GS-IST and RCIQE, Hokkaido Univ., 2.JST-PRESTO)

12:00 PM - 12:15 PM

[11a-A23-12] Possibility of Steep Subthreshold Swing MOSFETs using Gate Insulators with Electric-Field-Dependent Permittivity and their Switching Performance Assessment

〇Hiroyuki Ota^1,³, Shinji Migita^1,³, Koichi Fukuda¹, Akira Toriumi^2,³ (1.AIST, 2.Univ. of Tokyo, 3.CREST, JST)

Oral presentation

[11p-A23-1~13] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 2:00 PM - 5:30 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[11p-A23-1] Experimental Study on 2D-Si Layers for Future Several-nm CMOS (X)

〇Yuya Suzuki¹, Yoshiki Nagamine¹, Takashi Aoki¹, Tomohisa Mizuno¹, Taturo Maeda² (1.Kanagawa Univ., 2.AIST)

2:15 PM - 2:30 PM

[11p-A23-2] Experimental Study on 2D-Si Layers for Future Several-nm CMOS(XI)

〇yoshiki nagamine¹, Yuuya suzuki¹, Takashi Aoki¹, Tomohisa Mizuno¹ (1.Kanagawa Univ.)

2:30 PM - 2:45 PM

[11p-A23-3] Fabrication method for coupled series-triple quantum dots using pattern-dependent oxidation

〇Takahumi Uchida¹, Isamu Yoshioka¹, Hikaru Satoh¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.IST. Hokkaido Univ., 2.NTT-BRL.)

2:45 PM - 3:00 PM

[11p-A23-4] Fabrication and evaluation of highly controllable Si-MOS quantum dot device

〇Takumu Honda¹, Tetsuo Kodera^4,⁵, Jun Yoneda³, Kenta Takeda², Seigo Tarucha^2,^3,⁵, Shunri Oda¹ (1.QNERC-Tokyo Tech., 2.The Univ. of Tokyo, 3.RIKEN, 4.Tokyo Tech, 5.NanoQuine-The Univ. of Tokyo)

3:00 PM - 3:15 PM

[11p-A23-5] Dopat Atom MOSFET by Low-concentration Phosphorus Doping

〇Yuki Takasu¹, Moraru Daniel², Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Shizuoka Univ.)

3:15 PM - 3:30 PM

▲ [11p-A23-6] First-principle calculations of the interactions between single phosphorus donor and boron acceptor in the P-B co-doped silicon nanostructures

〇(P)Le The Anh¹, Daniel Moraru², Manoharan Muruganathan¹, Michiharu Tabe², Hiroshi Mizuta^1,³ (1.JAIST, 2.Shizuoka Univ., 3.Univ. of Southampton)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[11p-A23-7] Possibility of ballistic transport in MOSFETs assessed by a compact model

〇Kenji Natori¹ (1.Tokyo Inst. Tech.)

4:00 PM - 4:15 PM

[11p-A23-8] Charge Pumping (CP) Characteristics of Single Si/SiO₂ Interface Traps: Direct and Electrical Observation of P_b0 Centers and Fundamental Improvement of the Conventional CP Theory

〇Toshiaki Tsuchiya¹, Yukinori Ono² (1.Shimane Univ., 2.Univ. of Toyama)

4:15 PM - 4:30 PM

△ [11p-A23-9] Analysis of electron capture process using time-domain measurement of charge pumping current

〇Masahiro Hori¹, Tokinobu Watanabe¹, Tsuchiya Toshiaki², Yukinori Ono¹ (1.Univ. of Toyama, 2.Shimane Univ.)

4:30 PM - 4:45 PM

[11p-A23-10] Direct observation of electron emission and recombination processes by time domain CP method

〇Masahiro Hori¹, Tokinobu Watanabe¹, Tsuchiya Toshiaki², Yukinori Ono¹ (1.Univ. of Toyama, 2.Shimane Univ.)

4:45 PM - 5:00 PM

[11p-A23-11] Single-electron transport via deep level in Al-N-implanted short-channel tunnel field-effect transistor (TFET)

〇Keiji Ono¹, Takahiro Mori², Satoshi Moriyama³ (1.RIKEN, 2.AIST, 3.NIMS)

5:00 PM - 5:15 PM

[11p-A23-12] First-Principles Calculation of Electronic Properties of Isoelectronic Impurity Complex in Si TFET

〇(DC)Shota Iizuka¹, Takashi Nakayama¹ (1.Chiba Univ.)

5:15 PM - 5:30 PM

[11p-A23-13] EDMR observation of recombination current in silicon PN junction

〇(M2)KEIGO FURUTA¹, Yukinori Ono¹, Yuuki Nishiuchi¹, Taiki Mitani¹, Masahiro Hori¹ (1.Univ. of Toyama)

Poster presentation

[12a-P13-1~11] 13.5 Semiconductor devices and related techologies

Thu. Mar 12, 2015 9:30 AM - 11:30 AM P13 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[12a-P13-1] Observation of single trap generation in SiO₂ film

〇Yoshiki Yonamoto¹ (1.Hitachi, Ltd., YRL)

9:30 AM - 11:30 AM

[12a-P13-2] Analysis of PBTI Degradation for n-type Tunnel FinFETs

〇Wataru Mizubayashi¹, Takahiro Mori¹, Koichi Fukuda¹, Yongxun Liu¹, Takashi Matsukawa¹, Yuki Ishikawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Shinji Migita¹, Yukinori Morita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (1.AIST)

9:30 AM - 11:30 AM

[12a-P13-3] Device Operation Analysis of Nanowire Type Schottky Barrier Tunnel FET

〇Taiyu Xu¹, Hiroki Kosugiyama¹, Shuichiro Hashimoto¹, Kouhei Takei¹, Jing Sun¹, Shuhei Asada¹, Xu Zhang¹, Takashi Wakamizu¹, Takashi Matsukawa², Meishoku Masahara², Takanobu Watanabe¹ (1.Waseda Univ., 2.AIST)

9:30 AM - 11:30 AM

[12a-P13-4] Measurement Result of Super Steep Subthreshold Slope with PN Body-Contacted SOI MOSFET at Ultra Low Drain Voltage

〇Yosuke Kuramoto¹, Takayuki Mori¹, Jiro Ida¹ (1.kanazawa institute of technology)

9:30 AM - 11:30 AM

[12a-P13-5] Improvement of Mobility and SS for Strained Si_0.1Ge_0.9 on Strained-Si-on-Insulator (sSOI) pMOSFETs

〇Keiji Ikeda¹, Yoshihiko Moriyama¹, Toshifumi Irisawa¹, Mizuki Ono¹, Yuuichi Kamimuta¹, Minoru Oda¹, Tomonori Miyaki¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (1.GNC-AIST)

9:30 AM - 11:30 AM

[12a-P13-6] SiGe buried channel p-MOSFET formed by sputter epitaxy

〇Takehiko Sakurazawa¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Takashi Mimura², Yoshiyuki Suda¹ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Inf. and Commun. Technol.)

9:30 AM - 11:30 AM

[12a-P13-7] Sn concentration dependence on the performance of depletion-mode ultra-thin GeSn pMOSFETs

〇Tatsuro Maeda¹, Jevasuwan Wipakorn¹, Hiroyuki Hattori¹, Noriyuki Uchida¹, Shu Miura², Masatoshi Tanaka², Nuno D. M. Santos³, Andre Vantomme³, J. -P. Locquet³, R. R. Lieten^3,^4,⁵ (1.AIST, 2.Yokohama Natl. Univ., 3.KU Lueven, 4.IMEC, 5.Entegris)

9:30 AM - 11:30 AM

[12a-P13-8] Fabrication of InGaAs channel tri-gate MOSFETs with MOVPE regrown source/drain

〇(M1)Haruki Kinoshita¹, Toru Kanazawa¹, Seiko Netsu¹, Yuichi Mishima¹, Yasuyuki Miyamoto¹ (1.Tokyo tech)

9:30 AM - 11:30 AM

[12a-P13-9] Variation of excited states by electric field in Si single-electron transistor

〇Hikaru Satoh¹, Takafumi Uchida¹, Isamu Yoshioka¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Akira Fujiwara², Yasuo Takahashi¹ (1.IST. Hokkaido Univ., 2.NTT BRL)

9:30 AM - 11:30 AM

[12a-P13-10] Pulse measurement of the electron spin states in a lithographically-defined silicon double quantum dot

〇Kousuke Horibe¹, Tetsuo Kodera^2,³, Shunri Oda^1,² (1.QNERC, Tokyo Tech., 2.Dept. of Phys. Electron., 3.NanoQuine, the Univ. of Tokyo)

9:30 AM - 11:30 AM

[12a-P13-11] TSV Reveal Process Using Very Fine Si/Cu Grinding and Metal Contamination Removal

〇Naoya Watanabe¹, Masahiro Aoyagi¹, Daisuke Katagawa², Tsubasa Bandoh³, Takahiko Mitsui³, Eiichi Yamamoto³ (1.AIST, 2.Apprecia Technology, 3.Okamoto Machine Tool Works)

Oral presentation

[12p-A23-1~11] 13.5 Semiconductor devices and related techologies

Thu. Mar 12, 2015 2:00 PM - 5:30 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:45 PM

[12p-A23-1] [Outstanding Achievement Award] Contribution on the evolution of high-density memory and pioneering reseach of three-dimensional integrated circuits

〇Mitsumasa Koyanagi¹ (1.Tohoku Univ.)

2:45 PM - 3:00 PM

[12p-A23-2] Channel Shape Dependent of Electrical Characteristics of Floating-Gate Type 3D FinFET Flash Memories

〇Yongxun Liu¹, Toshihide Nabatame², Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi O'uchi¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Toyohiro Chikyow², Meishoku Masahara¹ (1.AIST, 2.NIMS)

3:00 PM - 3:15 PM

△ [12p-A23-3] Substrate Doping Concentration Dependence on Spatial and Statistical Distribution of Rndom Telegraph Noise in 30nm NAND flash memory

〇(M1)toshihiro tomita¹, miyaji kousuke¹ (1.Shinshu Univ.)

3:15 PM - 3:30 PM

[12p-A23-4] Research on the Performance of the Storage-Class Memory/NAND Flash Memory Hybrid SSD Considering Reliability

〇Hirofumi Takishita¹, Shuhei Tanakamaru^1,², Shogo Hosaka¹, Koh Johguchi¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. of Tokyo.)

3:30 PM - 3:45 PM

[12p-A23-5] Highly reliable method of SSD for long term storage

〇Senju Yamazaki¹, Shuhei Tanakamaru^1,², Yuta Kitamura¹, Ken Takeuchi¹ (1.Chuo. Univ., 2.Univ. Tokyo)

3:45 PM - 4:00 PM

[12p-A23-6] Highly reliable method for enterprise solid-state-drives

〇Senju Yamazaki¹, Shuhei Tanakamaru^1,², Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. Tokyo)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[12p-A23-7] Fast Read and Highly Reliable LDPC for TLC NAND Flash Memory

〇Tsukasa Tokutomi¹, Masafumi Doi¹, Shogo Hachiya¹, Shuhei Tanakamaru¹, Ken Takeuchi¹ (1.Chuo Univ.)

4:30 PM - 4:45 PM

[12p-A23-8] Dynamic V_TH Optimization and Auto Data Recovery for High Reliable TLC Flash Based Solid-State Drives (SSDs)

〇Atsuro Kobayashi¹, Tsukasa Tokutomi¹, Masafumi Doi¹, Shogo Hachiya¹, Shuhei Tanakamaru¹, Ken Takeuchi¹ (1.Chuo Univ.)

4:45 PM - 5:00 PM

▲ [12p-A23-9] Measurements and Statistical Comparison of Four Write Stability Metrics in Bulk CMOS SRAM Cells

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

5:00 PM - 5:15 PM

▼ [12p-A23-10] Statistical Analysis of Four Write Stability Metrics in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Low Supply Voltage Down to 0.4V

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

5:15 PM - 5:30 PM

[12p-A23-11] Detailed Analysis of Minimum Operation Voltage (V_min) of Extraordinarily Unstable Cells in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM

〇Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

Oral presentation

[13a-A23-1~10] 13.5 Semiconductor devices and related techologies

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-A23-1] Development of the non-contact testing applying Pulse Photo-Conductiviyt Method

〇(M1)Kojiro Shimizu¹, Kazuki Fukuda², Jyunpei Fukashi¹, Masaaki Furuta¹, Masao Yoshioka², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Keiichi Yoshinaga³ (1.GGST Kumamoto Univ., 2.Kumamoto Univ., 3.Tera probe)

9:15 AM - 9:30 AM

▲ [13a-A23-2] Development of amorphous Si / crystalline Si heterojunction strip detector for X-ray/gamma ray imaging

〇Xiaosong Yan¹, Yang Tian¹, Shimazoe Kenji¹, Fujiwara Takeshi¹, Takahashi Hiroyuki¹, Ishikura Takeshi², Tomita Hideki³ (1.Univ. Tokyo, 2.Fuji Electric Co. Ltd., 3.Nagoya Univ.)

9:30 AM - 9:45 AM

▼ [13a-A23-3] Thermal analysis on a vertical GaN Gunn diode

〇(DC)Wang Ying^1,², Lin-An Yang¹, Jin-Ping Ao², Zhi-Zhe Wang¹, Yue Hao¹ (1.Xidian Univ., 2.Tokushima Univ.)

9:45 AM - 10:00 AM

[13a-A23-4] First Research Prototype of Schottky Diode for Energy Harvesting

〇Akihira Miyachi¹, Makoto Matsunoshita¹, Naoki Hasegawa^1,², Takumasa Noji^1,³, Satoshi Yoshida¹, Shigeo Kawasaki¹ (1.ISAS. JAXA., 2.RISH. Kyoto Univ., 3.Tokyo Metropolitan Univ.)

10:00 AM - 10:15 AM

[13a-A23-5] Preliminary study on antenna-coupled bolometer utilizing SOI MOSFET

〇(M1)Takeo Ueta², Yuya Suzuki², Hiroaki Satoh^1,², Ajay Tiwari¹, Norihisa Hiromoto², Hiroshi Inokawa^1,² (1.RIE, Shizuoka Univ., 2.GSE, Shizuoka Univ.)

10:15 AM - 10:30 AM

[13a-A23-6] Low power consumption of hydrogen sensors by self-heating of SOI transistors

〇Tsutomu Miyata¹, Go Takeuchi¹, Tsunaki Takahashi^1,², Ken Uchida^1,² (1.Keio University, 2.JST CREST)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[13a-A23-6.5] Silicon Technology Division Award Ceremony

11:00 AM - 11:30 AM

[13a-A23-7] [Silicon Technology Division Award Speech] Three-Dimensional Integrated Circuits Using Au/SiO₂ Hybrid Bonding

〇Masahide Goto¹, Kei Hagiwara¹, Yoshinori Iguchi¹, Hiroshi Ohtake¹, Takuya Saraya², Eiji Higurashi², Hiroshi Toshiyoshi², Toshiro Hiramoto² (1.NHK, 2.Univ. of Tokyo)

11:30 AM - 12:00 PM

[13a-A23-8] [Silicon Technology Division Award Speech] High Performance InGaAs-OI MOSFETs on Si by Novel Direct Wafer Bonding Technology applicable to Large Wafer Size Si

〇SangHyeon Kim^1,^2,³, Yuki Ikku^1,², Masafumi Yokoyama¹, Ryosho Nakane¹, Jian Li⁴, Yung-Chung Kao⁴, Mitsuru Takenaka^1,², Shinichi Takagi^1,² (1.The University of Tokyo, 2.JST-CREST, 3.Korea Institute of Science and Technology, 4.IntelliEPI, Inc.)

12:00 PM - 12:15 PM

[13a-A23-9] [Silicon Technology Division Award Speech] Development of polycrystalline GeSn films --Aiming for 3D-IC--

〇Masashi Kurosawa^1,², Hiroshi Ikenoue³, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,⁴ (1.Nagoya Univ., 2.JSPS, 3.Kyushu Univ., 4.ESI, Nagoya Univ.)

12:15 PM - 12:30 PM

▲ [13a-A23-10] [Silicon Technology Division Award Speech] Si-based Light Emitting Devices with Ge Quantum Dots Embedded in Optical Microcavities

〇Xuejun Xu¹, Takuya Maruizumi¹, Yasuhiro Shiraki¹ (1.Tokyo City Univ.)

Oral presentation

[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

Fri. Mar 13, 2015 4:15 PM - 7:00 PM A23 (6A-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:15 PM - 4:30 PM

[13p-A23-1] Evaluation of sulfurization process of Mo toward large scale MoS₂ film

〇(B)kentarou matsuura¹, Takumi Ohashi¹, Shimpei Yamaguchi¹, Kohei Suda², Ishihara Seiya², Naomi Sawamoto², Kuniyuki Kakushima¹, Nobuyuki Sugii¹, Akira Nishiyama¹, Yoshinori Kataoka¹, Kenji Natori¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyo Tech., 2.Meiji Univ.)

4:30 PM - 4:45 PM

[13p-A23-2] Room Temperature Solid Diffusion between Ni and InAs

〇Takaya Magatayama¹, Koji Horiba², Hiroshi Kumigashira², Hideya Kumomi³, Hideo Hosono^1,^3,⁴, Yutaka Majima^1,³ (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.KEK-PF, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

4:45 PM - 5:00 PM

[13p-A23-3] Floating Gate Memory Effect on Double Layer 2D-InAs XOI FET

〇Takaya Magatayama¹, Shinya Kano¹, Kuniharu Takei², Steven Chuang², Ali Javey², Hideya Kumomi³, Hideo Hosono^1,^3,⁴, Yutaka Majima^1,³ (1.Materials and Structures Laboratory, Tokyo Institute of Technology, 2.UC Berkeley, 3.Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4.Frontier Research Center, Tokyo Institute of Technology)

5:00 PM - 5:15 PM

[13p-A23-4] In-situ TEM observation of Cu/MoO_x/Al₂O₃ having double insulator layers

〇Shuichiro Hirata¹, Akihito Takahashi¹, Masaki Kudo¹, Takahiro Hiroi¹, Akitoshi Nakane¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

5:15 PM - 5:30 PM

[13p-A23-5] Influence of the heat treatment on CBRAM with Cu electrode

Akitoshi Nakane¹, Reon Katsumura¹, Takahiro Hiroi¹, Atsushi Tsurumaki-Fukuchi¹, 〇Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

Break （5:30 PM - 5:45 PM）

5:45 PM - 6:00 PM

[13p-A23-6] Control of the resistance of resistance random access memories by MOSFET

Takahiro Hiroi¹, Akitoshi Nakane¹, Reon Katsumura¹, Atsushi Tsurumaki-Fukuchi¹, 〇Masashi Arita¹, Yasuo Takahashi¹, Hirofumi Urabe², Hideyuki Ando², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech.)

6:00 PM - 6:15 PM

△ [13p-A23-7] Analog memory operation in a Cu-MoO_x-Al resistance change memory fabricated on a MOSFET

〇Hirofumi Urabe¹, Kazumasa Tomizaki¹, Hideyuki Ando¹, Takashi Morie¹, Takahiro Hiroi², Akitoshi Nakane², Atsushi Fukichi², Masashi Arita², Yasuo Takahashi² (1.Kyushu Inst. Tech., 2.Hokkaido Univ.)

6:15 PM - 6:30 PM

[13p-A23-8] Retention Characteristics of 50 nm Al_xO_y ReRAM Array Before and After Endurance

〇Hiroki Yamazawa¹, Sheyang Ning^1,², Tomoko Ogura Iwasaki¹, Shuhei Tanakamaru¹, Koh Johguchi¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Univ. of Tokyo)

6:30 PM - 6:45 PM

[13p-A23-9] Evaluation of ReRAM Write Characteristics

〇Shin Nishikawa¹, Sheyang Ning^1,², Shogo Hachiya¹, Ken Takeuchi¹ (1.Chuo Univ., 2.Tokyo Univ.)

6:45 PM - 7:00 PM

[13p-A23-10] Vertical and Horizontal Location Design of Program Voltage Generator for 3D-Integrated ReRAM/NAND Flash Hybrid SSD

〇(M1)TOMOYA ISHII¹, KOH JOHGUCHI¹, KEN TAKEUCHI¹ (1.Chuo Univ.)

Sessions

13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11a-A23-1~12] 13.5 Semiconductor devices and related techologies

▲ [11a-A23-2] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates

△ [11a-A23-3] Theoretical Investigations on Effects of Surface Roughness Scattering on Hole Mobility in Ge Nanowires

△ [11a-A23-6] Scaling the channel length of InGaAs-MOSFET

▼ [11a-A23-9] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

[11p-A23-1~13] 13.5 Semiconductor devices and related techologies

▲ [11p-A23-6] First-principle calculations of the interactions between single phosphorus donor and boron acceptor in the P-B co-doped silicon nanostructures

△ [11p-A23-9] Analysis of electron capture process using time-domain measurement of charge pumping current

[12a-P13-1~11] 13.5 Semiconductor devices and related techologies

[12p-A23-1~11] 13.5 Semiconductor devices and related techologies

△ [12p-A23-3] Substrate Doping Concentration Dependence on Spatial and Statistical Distribution of Rndom Telegraph Noise in 30nm NAND flash memory

▲ [12p-A23-9] Measurements and Statistical Comparison of Four Write Stability Metrics in Bulk CMOS SRAM Cells

▼ [12p-A23-10] Statistical Analysis of Four Write Stability Metrics in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Low Supply Voltage Down to 0.4V

[13a-A23-1~10] 13.5 Semiconductor devices and related techologies

▲ [13a-A23-2] Development of amorphous Si / crystalline Si heterojunction strip detector for X-ray/gamma ray imaging

▼ [13a-A23-3] Thermal analysis on a vertical GaN Gunn diode

▲ [13a-A23-10] [Silicon Technology Division Award Speech] Si-based Light Emitting Devices with Ge Quantum Dots Embedded in Optical Microcavities

[13p-A23-1~10] 13.5 Semiconductor devices and related techologies

△ [13p-A23-7] Analog memory operation in a Cu-MoOx-Al resistance change memory fabricated on a MOSFET

Authentication

△ [13p-A23-7] Analog memory operation in a Cu-MoO_x-Al resistance change memory fabricated on a MOSFET