[12p-A21-1~13] 13.8 Compound and power electron devices and process technology

△ [12p-A21-5] Normally-off P-channel AlGaN/GaN HFET by introducing MOS gate structure

〇Shunsuke Kubota¹, Rei Kayanuma¹, Akira Nakajima³, Shin-ichi Nishizawa³, Hiromichi Ohashi^{2, 3}, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai² (1.Tokyo Tech. IGSSE, 2.Tokyo Tech. FRC, 3.AIST)

Keywords:nitride semiconductor,P-channel,normally-off