[12p-A23-1~11] 13.5 デバイス／集積化技術

▼ [12p-A23-10] Statistical Analysis of Four Write Stability Metrics in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Low Supply Voltage Down to 0.4V

〇(D)Hao Qiu¹, Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Tomohiro Yamashita², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.LEAP)

キーワード：SOTB SRAM cells,write noise margin, variability,low supply voltage