The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.8 Compound and power electron devices and process technology

[13p-P17-1~24] 13.8 Compound and power electron devices and process technology

Fri. Mar 13, 2015 4:30 PM - 6:30 PM P17 (Gymnasium)

4:30 PM - 6:30 PM

[13p-P17-21] Influence of surface morphology on breakdown voltage in AlGaN/GaN HEMT structure on GaN substrate

〇Shinichi Tanabe1, Noriyuki Watanabe1, Masahiro Uchida2, Hideaki Matsuzaki1 (1.NTT Device Technology Labs., 2.NTT-AT)

Keywords:GaN