The 62nd JSAP Spring Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

9:45 AM - 10:00 AM

[14a-B4-4] High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Precise Control of Cooling Rate during Atmospheric Pressure Thermal Plasma Jet Irradiation

〇(M2)KEISUKE MARUYAMA1, HIROAKI HANAFUSA1, SHOHEI HAYASHI1, HIDEKI MURAKAMI1, SEIICHIRO HIGASHI1 (1.Hiroshima Univ.)

Keywords:semiconductor,silicon carbide,activation