Katsuya Terashima

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Speaker, Author, Co-Author

Wed. Sep 14, 2016 9:30 AM - 11:30 AM P6 (Exhibition Hall)

Poster presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

9:30 AM - 11:30 AM

[14a-P6-6] Dependence of evaporation method on the characteristics of Ni Schottky diodes on N-polar n-type GaN

〇Katsuya Terashima¹, Ryohei Nonoda², Kanako Shojiki², Tomoyuki Tanikawa², Takashi Matsuoka², Hideaki Suzuki¹, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.IMR,Tohoku Univ.)

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