[14a-P6-1~20] 13.8 Compound and power electron devices and process technology

[14a-P6-6] Dependence of evaporation method on the characteristics of Ni Schottky diodes on N-polar n-type GaN

〇Katsuya Terashima¹, Ryohei Nonoda², Kanako Shojiki², Tomoyuki Tanikawa², Takashi Matsuoka², Hideaki Suzuki¹, Hiroshi Okamoto¹ (1.Hirosaki Univ., 2.IMR,Tohoku Univ.)

Keywords:GaN, nitride semiconductor, Schottky diode

It has been pointed out that x-ray generated during electron beam (EB) evaporation sometimes causes damages into samples. In this report, Ni Schottky diodes were fabricated on N-polar (-c plane) n-type GaN by resistive heating (RH) and EB evaporation. Then, ideality factors n and Schottky barrier heights ψ were evaluated based on J-V characteristics. Schottky diodes with higher ψ and lower leakage current were obtained by RH evaporation than those by EB evaporation.