Sho Morita

→ Search for Sho Morita in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 15, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

12:15 PM - 12:30 PM

[15a-B1-13] Electrical Properties of Al-Foil/Wide-Gap-Semiconductor Junctions Fabricated by Surface-Activated Bonding

〇Sho Morita¹, Takuya Nishimura¹, Jianbo Liang¹, Moeko Matsubara², Marwan Dhamrin², Yoshitaka Nishio², Naoteru shigekawa¹ (1.Osaka City Univ., 2.Toyo Aluminium K.K.)

▲