Kenji Shiojima

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

[15a-B1-10] Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Takanori Hashizume¹, Fumimasa Horikiri², Takeshi Tanaka², Tomoyoshi Mishima³ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

Thu. Sep 15, 2016 1:45 PM - 7:00 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

3:00 PM - 3:15 PM

[15p-C302-5] Mapping of 3C-SiC layers by using dual-focus scanning internal photoemission microscopy

〇Kenji Shiojima¹, Naoto Ichikawa², Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)