〇Hidetoshi Nakanishi¹, Tatsuhiko Nishimura¹, Fujikazu Kitamura¹, Minoru Mizubata¹, Yuji Sakai², Iwao Kawayama², Masayoshi Tonouchi² (1.SCREEN, 2.ILE Osaka Univ.)

4:15 PM - 4:30 PM

△ [15p-C302-9] Correlation between shapes of Shockley stacking faults and
structure of basal plane dislocations in 4H-SiC epilayers

〇(M1)Akifumi Iijima¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

[15p-C302-10] Observation of the expansion of basal plane dislocation by the electron beam excitation in A-face n-type 4H-SiC epitaxial layer

〇Masaki Sudo¹, Yao Yong-Zhao², Sugawara Yoshihiro², Ishikawa Yukari^1,2, Kato Masashi¹ (1.NIT, 2.JFCC)

4:45 PM - 5:00 PM

[15p-C302-11] Time-resolved measurements for photoluminescence from SSF in n-type 4H-SiC

〇Masashi Kato¹, Shinnya Katahira¹, Yoshihito Ichikawa¹, Masaya Ichimura¹, Shunta Harada² (1.Nagoya Inst. Tech., 2.Nagoya Univ.)

5:00 PM - 5:15 PM

[15p-C302-12] Dependence of surface recombination for 4H-SiC on pH of contacted aqueous solution

〇(M2)Yoshihito Ichikawa¹, Kato Masashi¹, Ichimura Masaya¹, Kimoto Tsunenobu² (1.NIT, 2.Kyoto Univ.)

5:30 PM - 5:45 PM

[15p-C302-13] Investigation of process induced defects in 4H-SiC epitaxial layers

〇Kumiko Konishi¹, Ryusei Fujita¹, Yuki Mori¹, Akio Shima¹, Yasuhiro Shimamoto¹ (1.Hitachi, Ltd. R&D Group)

5:45 PM - 6:00 PM

[15p-C302-14] Development of in-situ observation for expansion and shrinkage of stacking faults induced in 4H-SiC PiN diode under electronic excitations.

〇Mina Ryo^1,2, Takeshi Tawara^1,2, Masaki Miyazato^1,2, Takumi Fujimoto², Kensuke Takenaka^1,2, Masaaki Miyajima^1,2, Akihiro Otsuki², Hidekazu Tsuchida³, Tomohisa Kato¹ (1.AIST, 2.Fuji Electric, 3.CRIEPI)

6:00 PM - 6:15 PM

[15p-C302-15] Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer

〇Takeshi Tawara^1,2, Tetsuya Miyazawa³, Mina Ryo^1,2, Masaki Miyazato^1,2, Takumi Fujimoto², Kensuke Takenaka^1,2, Shinichiro Matsunaga^1,2, Masaaki Miyajima^1,2, Akihiro Otsuki², Yoshiyuki Yonezawa¹, Tomohisa Kato¹, Hajime Okumura¹, Tsunenobu Kimoto⁴, Hidekazu Tsuchida³ (1.AIST, 2.Fuji Electric, 3.CRIEPI, 4.Kyoto Univ.)

6:15 PM - 6:30 PM

△ [15p-C302-16] Shunt current in 4H-SiC mesa pn diodes caused by post-oxidation nitridation of SiO₂ passivation

〇Satoshi Asada¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

6:30 PM - 6:45 PM

△ [15p-C302-17] Analysis on Reverse Recovery Characteristics of SiC-pin Diode for High-speed and High-voltage Pulse Generator

〇Takuma Shirai¹, Noriyuki Iwamuro¹, Kenji Fukuda² (1.Univ. Tsukuba, 2.AIST)

6:45 PM - 7:00 PM

△ [15p-C302-18] Investigation of SiC Superjunction MOSFETs RonA-Vbr characteristics taking the charge imbalance of p and n layers into account

〇Mikiko Tanabe¹, Noriyuki Iwamuro¹ (1.Univ. of Tsukuba)

Session information

[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-1] [JSAP Best Review Paper Award Speech] Material science and device physics in SiC technology for high-voltage power devices

△ [15p-C302-2] Thinning of SiC Wafer by sub-atmospheric plasma etching with high concentration of SF₆

△ [15p-C302-3] High Selectivity in SiC/SiO₂ Etching by ICP-RIE in a SF₆-O₂-Ar Chemistry

△ [15p-C302-4] Generation of etch pits in electrochemical etching of p-type SiC

[15p-C302-5] Mapping of 3C-SiC layers by using dual-focus scanning internal photoemission microscopy

△ [15p-C302-6] 3C-SiC photoelectrode with solar to hydrogen energy conversion efficiency of 0.58 %

△ [15p-C302-7] Relationship between Luminescence from Single Photon Source Created near the Surface of 3C-SiC and Surface Treatments

[15p-C302-8] Characterization of SiC Wafer/Device Using a Laser Terahertz Emission Microscope

△ [15p-C302-9] Correlation between shapes of Shockley stacking faults and
structure of basal plane dislocations in 4H-SiC epilayers

[15p-C302-10] Observation of the expansion of basal plane dislocation by the electron beam excitation in A-face n-type 4H-SiC epitaxial layer

[15p-C302-11] Time-resolved measurements for photoluminescence from SSF in n-type 4H-SiC

[15p-C302-12] Dependence of surface recombination for 4H-SiC on pH of contacted aqueous solution

[15p-C302-13] Investigation of process induced defects in 4H-SiC epitaxial layers

[15p-C302-14] Development of in-situ observation for expansion and shrinkage of stacking faults induced in 4H-SiC PiN diode under electronic excitations.

[15p-C302-15] Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer

△ [15p-C302-16] Shunt current in 4H-SiC mesa pn diodes caused by post-oxidation nitridation of SiO₂ passivation

△ [15p-C302-17] Analysis on Reverse Recovery Characteristics of SiC-pin Diode for High-speed and High-voltage Pulse Generator

△ [15p-C302-18] Investigation of SiC Superjunction MOSFETs RonA-Vbr characteristics taking the charge imbalance of p and n layers into account

Authentication

Session information

[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-C302-2] Thinning of SiC Wafer by sub-atmospheric plasma etching with high concentration of SF6

△ [15p-C302-3] High Selectivity in SiC/SiO2 Etching by ICP-RIE in a SF6-O2-Ar Chemistry

△ [15p-C302-4] Generation of etch pits in electrochemical etching of p-type SiC

△ [15p-C302-6] 3C-SiC photoelectrode with solar to hydrogen energy conversion efficiency of 0.58 %

△ [15p-C302-7] Relationship between Luminescence from Single Photon Source Created near the Surface of 3C-SiC and Surface Treatments

△ [15p-C302-9] Correlation between shapes of Shockley stacking faults andstructure of basal plane dislocations in 4H-SiC epilayers

△ [15p-C302-16] Shunt current in 4H-SiC mesa pn diodes caused by post-oxidation nitridation of SiO2 passivation

△ [15p-C302-17] Analysis on Reverse Recovery Characteristics of SiC-pin Diode for High-speed and High-voltage Pulse Generator

△ [15p-C302-18] Investigation of SiC Superjunction MOSFETs RonA-Vbr characteristics taking the charge imbalance of p and n layers into account

Authentication

△ [15p-C302-2] Thinning of SiC Wafer by sub-atmospheric plasma etching with high concentration of SF₆

△ [15p-C302-3] High Selectivity in SiC/SiO₂ Etching by ICP-RIE in a SF₆-O₂-Ar Chemistry

△ [15p-C302-9] Correlation between shapes of Shockley stacking faults and
structure of basal plane dislocations in 4H-SiC epilayers

△ [15p-C302-16] Shunt current in 4H-SiC mesa pn diodes caused by post-oxidation nitridation of SiO₂ passivation