Masaki Sudo

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Speaker, Author, Co-Author

Thu. Sep 15, 2016 1:45 PM - 7:00 PM C302 (Nikko Houou)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-C302-1~18] 15.6 Group IV Compound Semiconductors (SiC)

4:30 PM - 4:45 PM

[15p-C302-10] Observation of the expansion of basal plane dislocation by the electron beam excitation in A-face n-type 4H-SiC epitaxial layer

〇Masaki Sudo¹, Yao Yong-Zhao², Sugawara Yoshihiro², Ishikawa Yukari^1,2, Kato Masashi¹ (1.NIT, 2.JFCC)