2:15 PM - 2:30 PM
△ [15p-C302-2] Thinning of SiC Wafer by sub-atmospheric plasma etching with high concentration of SF6
〇Yuuki Inoue1, Koki Tajiri1, Yasuhisa Sano1, Satoshi Matsuyama1, Kazuto Yamauchi1 (1.Osaka Univ.)
Thu. Sep 15, 2016 1:45 PM - 7:00 PM C302 (Nikko Houou)
2:15 PM - 2:30 PM
〇Yuuki Inoue1, Koki Tajiri1, Yasuhisa Sano1, Satoshi Matsuyama1, Kazuto Yamauchi1 (1.Osaka Univ.)