Masayuki Tsukui

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

9:00 AM - 9:15 AM

[16a-A21-1] Effect of Rotation Speed on AlGaN Growth in GaN HEMT Structure Grown on 200mm Si Substrate by Fast Rotating Single-wafer MOCVD tool

〇Masayuki Tsukui¹, Yasushi Iechika¹, Kiyotaka Miyano¹, Hideshi Takahashi¹ (1.NuFlare Technology)