Ryosuke Kanayama

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Speaker, Author, Co-Author

Fri. Sep 16, 2016 9:00 AM - 12:15 PM A21 (Main Hall A)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[16a-A21-1~12] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

△ [16a-A21-5] Characterization of AlGaN/GaN heterostructure by in situ X-ray diffraction attached metalorganic vapor phase epitaxy

〇(M1)Ryosuke Kanayama¹, Junya Osumi¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ, 2.Akasaki Res Cen, Nagoya Univ)

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