[13p-A21-1~16] 15.4 III-V-group nitride crystals

[13p-A21-13] Mask width dependence of selective growth of GaN and mechanism of
facet formation via Hydride Vapor Phase Epitaxy

〇Shin Goubara¹, Kota Yukizane¹, Tohoru Matsubara¹, Norihiro Itagaki¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)

Keywords:GaN, HVPE