[13p-B8-1~10] Recent topics of point defects in semicondoctor crystals

[13p-B8-4] Effect of Point Defect on Formation of Thermal Donor in Silicon Wafer

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO Corporation)

Keywords:silicon, thermal donor, point defect

It is well known that thermal donors (TDs) is formed in silicon crystals during annealing at 400-500^oC. They are reported to be oxygen clusters whose formation can be retarded by vacancy and enhanced by interstitial silicon. In this work, we have found that TD formation can be enhanced depending on the density of oxygen precipitates using silicon wafers with different grown-in defects attributed to point defects.