〇Kazunobu Kojima¹, Tomomi Ohtomo¹, Makoto Saito^1,2, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Mitsubishi Chemical Corp.)

Sessions

Symposium » Recent topics of point defects in semicondoctor crystals

[13p-B8-1~10] Recent topics of point defects in semicondoctor crystals

[13p-B8-1] Current understanding of intrinsic point defects in semiconductor crystals

[13p-B8-2] Point Defect Control during Si Crystal Growth

[13p-B8-3] Control of point defects in Si wafer by ultrahigh-temperature RTP technique

[13p-B8-4] Effect of Point Defect on Formation of Thermal Donor in Silicon Wafer

[13p-B8-5] Density Functional Theory Study on Intrinsic Point Defects in Semiconductor Crystals

[13p-B8-6] Defect reactions of hydrogen impurity with Cu₄ complex in silicon

[13p-B8-7] Characterization of point defects by means of positron annihilation
- Si, nitrides, metals, and insulators -

[13p-B8-8] Point Defects in SiC from a Perspective of Power Device Application

▲ [13p-B8-9] DLTS and Photoluminescence Analysis of Intentionally B-doped 4H-SiC Epilayers

[13p-B8-10] Measurement of the absolute quantum efficiency of radiation in high quality GaN single crystals (3)

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