[13p-B8-1~10] Recent topics of point defects in semicondoctor crystals

[13p-B8-7] Characterization of point defects by means of positron annihilation
- Si, nitrides, metals, and insulators -

〇Akira Uedono¹, Shoji Ishibashi² (1.Div. Appl. Phys., Univ. of Tsukuba, 2.CD-FMat, AIST)

Keywords:vacancy, positron annihilation

Positron annihilation is a powerful technique for evaluating vacancy-type defects in materials. It can provide information about defect spices, densities, and depth distributions. We report studies of vacancy-type defects in grinded Si, ion-implanted GaN, electroplated Cu, and porous materials.