[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

[14a-B13-7] Measurement of SRAM Power-up Data using an Addressable Cell Array Test Structure

〇KIYOSHI TAKEUCHI¹, TOMOKO MIZUTANI¹, HIROFUMI SHINOHARA², TAKUYA SARAYA¹, MASAHARU KOBAYASHI¹, TOSHIRO HIRAMOTO¹ (1.Univ. Tokyo, 2.Waseda Univ.)

Keywords:SRAM

SRAM data just after power-up, useful for PUF applications, were measured using an addressable cell array test structure, which was originally designed for transistor and cell variability evaluation. It was found that the data were influenced by address switching noise and “memory effect.” Such adverse effects could be minimized by initializing the internal node voltage before each power-up events.