[14a-B13-1~10] 13.5 Semiconductor devices and related technologies

[14a-B13-6] Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Ryota Suzuki¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Keywords:nanowire, variability, DIBL

The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire channel FETs are measured and statistically analyzed. It was found that the drain-induced variability and “within-device” variability increase as the nanowire width decreases to 2nm. The origin of the increased variability is ascribed to quantum confinement due to nanowire width asymmetry at source/drain.