[14a-B13-1~10] 13.5 デバイス／集積化技術

▲ [14a-B13-8] A New Write Stability Metric for Yield Estimation in SRAM Cells at Low Supply Voltage

〇(D)Hao Qiu¹、Kiyoshi Takeuchi¹、Tomoko Mizutani¹、Takuya Saraya¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.Institute of Industrial Science, The University of Tokyo)

キーワード：SRAM, Write noise margin, Low voltage

A new extended write butterfly curve (BC) is proposed and evaluated through our device-matrix-array test-element-group (DMA-TEG) fabricated by Silicon-on-Thin-BOX (SOTB) technology. A good normality at low supply voltage (V_DD), as well as good correlation with word-line method, demonstrates the extended write BC as a good candidate for yield estimation at low V_DD. The comparison with conventional write BC is also discussed.