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△ [14a-C41-5] Fabrication of a spin injection device having a top-gate structure
Keywords:spintronics
We fabricated a spin injection device having a top-gate structure, and demonstrated a gate control of spin-valve signals in InGaAs channel. Experiments showed that the amplitude of the spin-valve signal decreased when the channel was depleted by the gate voltage. These results indicate that the developed top-gate structure paves the way to implementing spin transistors.