[14a-C41-1~6] 10.2 Spin torque, spin current, circuits, and measurement technologies

△ [14a-C41-5] Fabrication of a spin injection device having a top-gate structure

〇Wataru Nomura¹, Takumi Miyakawa¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

Keywords:spintronics

We fabricated a spin injection device having a top-gate structure, and demonstrated a gate control of spin-valve signals in InGaAs channel. Experiments showed that the amplitude of the spin-valve signal decreased when the channel was depleted by the gate voltage. These results indicate that the developed top-gate structure paves the way to implementing spin transistors.