[14p-A21-1~13] Recent Progress of Nitride Semiconductor -Toward Defectless Crystal and Devices-

[14p-A21-6] Demonstration of a free-standing GaN crystal having a diameter of 7-inch with a tiling technique

〇Takehiro Yoshida¹, Masayuki Imanishi², Toshio Kitamura¹, Kenji Otaka¹, Masatomo Shibata¹, Mamoru Imade², Yusuke Mori² (1.SCIOCS, 2.Osaka Univ.)

Keywords:GaN substrate