[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-23] TiO₂ channel thin-film transistors by using RT-atomic layer deposition.

〇Ko Kikuchi¹, Kensaku Kanomata¹, Masanori Miura¹, Bashir Ahmmad¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ.)

Keywords:TiO2, Thin-film transistor

Titanium oxide (TiO₂) has attracted attention as an n-type semiconductor oxide.We developed a thin film transistor (TFT) using a TiO₂ prepared by using the room temperature atomic layer deposition.Result, good output characteristicsand photoresponsive were obtained.