[14p-P5-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[14p-P5-7] Self-Aligned Planar Metal Double Gate Low-Temperature Poly-Ge TFTs on a Glass Substrate Using Al-Induced Lateral Growth on SD Region

〇Akito Hara¹, Yuya Nishimura¹, Hiroki Ohsawa¹ (1.Tohoku Gakuin Univ.)

Keywords:TFT, Ge, poly-Ge

Self-aligned metal DG JL p-ch LT poly-Ge TFTs were fabricated on a glass substrate using Al-induced lateral crystallization on SD region under optimized condition. This TFT showed an on/off ratio of 1000 and mobility of 20 cm²/Vs.