2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(ポスター講演)

13 半導体 » 13.6 Semiconductor English Session

[14p-P7-1~2] 13.6 Semiconductor English Session

2016年9月14日(水) 13:30 〜 15:30 P7 (展示ホール)

13:30 〜 15:30

[14p-P7-2] Improvement of RF performance by using double δ-doping in InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well

AMINE ELMOUTAOUAKIL1、Takuya HOSHI1、Hiroki SUGIYAMA1、Hideaki MATSUZAKI1 (1.NTT Device Technology Labs.)

キーワード:InAs, HEMT, III-V

InP-based high-electron-mobility transistors (HEMTs) with InAs quantum-well are known for their record high-speed performances, mainly due to their high electron mobility and saturation velocity. Along with scaling, double δ-doping in HEMTs is used to boost the operation speed. However, there are no quantitative reports comparing structures with both single- and double-doping layers. In this work, we report on the performance of the double-δ-doped (DD) HEMT in comparison to the single-δ-doped (SD) HEMT. SD and DD HEMTs with a 6-nm-thick InAs/In0.8Ga0.2As quantum well were investigated. For DD HEMT, equivalent fT values to those of SD HEMT were obtained even with lower μ, and fMAX shows higher value than that of SD HEMT. These results can be explained in part by the low gD in DD HEMTs.