[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-10] Theoritical investigation of C=C bonding defect formation by SiC oxidation

〇Kenta Chokawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:SiC, defect structure, Density Functional Theory