[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-1] Dependence of growth orientation for dislocation density and residual strain during silicon single crystal growth

〇Satoshi Nakano¹, Bing Gao¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:dislocation, simulation

Dislocation density causes the reduction of quality for a silicon crystal. And residual stress causes the fracture of silicon ingot. In this study, we investigated the influence of growth orientation ([001], [111]) on dislocation density and residual strain in a silicon crystal by numerical analysis. The results show the relation between the growth orientation and slip systems in a silicon crystal is important for dislocation density and residual strain.