〇Junji Matsui¹, Yoshiyuki Tsusaka², Tetsuya Tsurumaru², Takao Abe³ (1.SR Nano-Tech.Center, Univ. Hyogo, 2.Grad. School mat. Sci., Univ. Hyogo, 3.ShinEtsu Handotai)

10:30 AM - 10:45 AM

[15a-A23-6] Thermal simulation of Si wafer in ultrahigh-temperature RTP

〇Tatsuhiko Aoki¹, Haruo Sudo¹, Koji Araki¹, Koji Izunome¹ (1.GlobalWafers Japan)

10:45 AM - 11:00 AM

[15a-A23-7] Annihilation behavior of void defects in nitrogen doped Cz-Si wafers by ultrahigh-temperature RTP

〇Haruo Sudo¹, Koji Araki¹, Tatsuhiko Aoki¹, Takeshi Senda¹, Susumu Maeda¹ (1.GlobalWafers Japan)

11:00 AM - 11:15 AM

[15a-A23-8] Annihilation behavior of oxygen precipitate nuclei in nitrogen doped Cz-silicon wafers by ultrahigh-temperature RTP

〇Hideyuki Okamura¹, Haruo Sudo¹, Koji Araki¹, Hiroyuki Saito¹, Susumu Maeda¹, Koji Sueoka², Kozo Nakamura³ (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Pref. Univ., 3.Regional Cooperative Research Organization, Okayama Pref. Univ.)

11:15 AM - 11:30 AM

[15a-A23-9] Precipitation behavior of oxygen in nitrogen doped Cz-silicon wafers by ultra-high temperature RTP

〇Susumu Maeda¹, Haruo Sudo¹, Koji Araki¹, Hiroyuki Saito¹ (1.GlobalWafers Japan)

11:30 AM - 11:45 AM

[15a-A23-10] Interaction between two vacancies in Si, and estimation of the capture radius

〇Eiji Kamiyama^1,2, Koji Sueoka¹ (1.Okayama Pref. Univ., 2.GlobalWafers Japan Co., Ltd.)

Oral presentation

[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Sep 15, 2016 1:15 PM - 6:45 PM A23 (201B)

Takahiro Maeta(Global Wafers Japan), Takuto Kojima(Meiji Univ.), Yutaka Ohno(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[15p-A23-1] Segregation ability of impurity atoms at large-angle grain boundaries in Si

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro 2utsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

1:30 PM - 1:45 PM

[15p-A23-2] Impurity segregation at grain boundaries in mono-like Si crystals

〇Yutaka Ohno¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ.)

1:45 PM - 2:00 PM

[15p-A23-3] Evaluation of depletion layer in power device (1) Evaluation by multi scanning prove microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma¹, Nobuo Satoh¹, Kyohei Komori¹, Akinori Oda¹ (1.Chiba Inst. of Tech.)

2:00 PM - 2:15 PM

[15p-A23-4] Evaluation of depletion layer in power device (2) Comparison with numerical calculation

〇Hidekazu Yamamoto¹, Kyohei Komori¹, Akinori Oda¹, Takeshi Uruma¹, Nobuo Satoh¹ (1.Chiba Inst. of Tech.)

2:15 PM - 2:30 PM

[15p-A23-5] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(1)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities-

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

2:30 PM - 2:45 PM

[15p-A23-6] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature (2)-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

2:45 PM - 3:00 PM

△ [15p-A23-7] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(3) - Development study of multi-element molecular ion implantation technique (2) -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO CORPORATION, 2.NISSIN ION EQUIPMENT CO,.LTD.)

3:15 PM - 3:30 PM

[15p-A23-8] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Detection of lifetime degradation due to oxygen precipitation

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

3:30 PM - 3:45 PM

[15p-A23-9] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Detection of lifetime degradation due to intentional Fe contamination

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

3:45 PM - 4:00 PM

[15p-A23-10] Measurement of oxygen concentration in FZ silicon crystal

〇Naohisa Inoue^6,1, Masumi Obuchi², Hiroyuki Uno³, Keiko Inoue⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Nano Science Corp., 3.SHI Exam. & Insp., 4.Toray Research C. Inc., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

4:00 PM - 4:15 PM

[15p-A23-11] Measurement of carbon concentration in silicon crystal (Ⅸ) from1E+16 to 1E+13

〇Naohisa Inoue^1,6, Keiko Inoue², Hisayoshi Ito³, Masumi Obuchi⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Toray Research C. Inc., 3.JAEA, 4.Nano Science Corp., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[15p-A23-12] Sensitivity and detection limit of carbon concentration measurement in silicon crystal

〇Naohisa Inoue^2,1 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

[15p-A23-13] Measurement of Low Carbon Concentration in Silicon Substrate Using Deep Level Transient Spectroscopy Method.

〇Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

4:45 PM - 5:00 PM

[15p-A23-14] Characterization of Iron in Silicon by Low Temperature PL and DLTS Measurements

〇Minoru Nakamura¹, Susumu Murakami¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

5:15 PM - 5:30 PM

△ [15p-A23-15] Determination of Low Carbon Concentration in CZ-Si for Solar Cells by Luminescence Activation Using Electron Irradiation

〇Hirotatsu Kiuchi¹, Michio Tajima¹, Fumito Higuchi¹, Atsushi Ogura¹, Nobuhito Iida², Shoji Tachibana², Isao Shoda², Eiichi Nishijima² (1.Meiji Univ., 2.Tokuyama Corporation)

5:30 PM - 5:45 PM

△ [15p-A23-16] Analysis of Oxygen Precipitation Process in CZ-Si by Luminescence Activation Using Electron Irradiation

〇fumito higuchi¹, michio tajima¹, hirotatsu kiuchi¹, atsushi ogura¹ (1.Meiji Univ.)

5:45 PM - 6:00 PM

[15p-A23-17] Analysis of Oxygen Precipitation by Highly Parallel X-ray Diffuse Scattering

〇Tomoyuki Horikawa¹, Takeshi Senda¹, Junji Matsui², Yoshiyuki Tsusaka² (1.GlobalWafers Japan Co., Ltd., 2.University of Hyogo)

6:00 PM - 6:15 PM

[15p-A23-18] Synchrotron Radiation X-ray Topography by Simultaneous Diffractions from Equivalent Lattice Planes in Si for Determination of Dislocation Burgers Vectors

〇Yoshiyuki Tsusaka¹, Tetsuya Tsurumaru¹, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Materials Sci., 2.Univ. of Hyogo, Syn. Rad. Nano-Tech. Center)

6:15 PM - 6:30 PM

[15p-A23-19] Characterization of GaN crystals with the X-ray topography (1)

〇Satoko Miyakawa¹, Yuko Kitano¹, Emiko Inoue¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

6:30 PM - 6:45 PM

△ [15p-A23-20] Characterization of GaN crystals with the X-ray topography (2)

〇(M1C)Yuko Kitano¹, Satoko Miyakawa¹, Emiko Inoue¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

Poster presentation

[16a-P6-1~9] 15.8 Crystal evaluation, impurities and crystal defects

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P6 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[16a-P6-1] Influence of Low Temperature Thermal History on Bulk Lifetime in CZ-Si Crystal

〇Yoshiji Miyamura¹, Hirofumi Harada¹, Satoshi Nakano¹, Koichi Kakimoto¹ (1.Kyushu Univ.)

9:30 AM - 11:30 AM

[16a-P6-2] Effect of thermal history on grown-in defect behavior during single crystal Si growth

〇Ryota Suewaka¹, Toshiaki Saishoji¹, Kazuhiro Harada¹ (1.SUMCO CORPORATION)

9:30 AM - 11:30 AM

△ [16a-P6-3] First principles analysis on Frenkel pair formation from oxygen clusters in Si crystals

〇Hiroaki Fukuda¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

9:30 AM - 11:30 AM

△ [16a-P6-4] First principle analysis of intrinsic point defect formation in stressed single Ge crystal

〇Shunta Yamaoka¹, Koji Kobayashi¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

9:30 AM - 11:30 AM

△ [16a-P6-5] Combined impacts of thermal stress and doping on the incorporation of intrinsic point defects in growing single crystal Si

〇(M2)kouji kobayashi¹, shunta yamaoka¹, kouji sueoka¹ (1.Okayama Pref Univ.)

9:30 AM - 11:30 AM

[16a-P6-6] First principles analysis on formation energy of dopant in Ge/Si structure

〇JUN INAGAKI¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

9:30 AM - 11:30 AM

[16a-P6-7] Raman studies on epitaxial ZnO thin films grown on a-, c- and r-sapphire substrates

〇Noriyuki Hasuike¹, Saito Ochiai¹, Koji Nishio¹, Toshiyuki Isshiki¹, Hiroshi Harima¹ (1.Kyoto Inst. Tech.)

9:30 AM - 11:30 AM

[16a-P6-8] TEM analysis of ZnO thin films grown on a-,c-, and r-plane sapphire substrates

〇Saito Ochiai¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Koji Nishio¹, Toshiyuki Isshiki¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[16a-P6-9] Evaluation of SiC crystal with laser annealing (4)

〇mizuki uchimori¹, Fulvio Mazzamuto², Tetsuya Nagai³, Katsuhiko Nakai³, Shuichi Ono⁴, Manabu Arai⁴, Hidekazu Yamamoto¹ (1.Chiba Institute of Technology, 2.SCREEN Semiconductor Solutions/LASSE, 3.Nippon Steel & Sumikin Technology, 4.New Japan Radio Co., Ltd.)

Sessions

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

▲ [15a-A23-2] Dynamic modeling of melting process and carbon contamination in packed Si chunks of Czochralski silicon crystal growth

[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

△ [15p-A23-7] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(3) - Development study of multi-element molecular ion implantation technique (2) -

△ [15p-A23-15] Determination of Low Carbon Concentration in CZ-Si for Solar Cells by Luminescence Activation Using Electron Irradiation

△ [15p-A23-16] Analysis of Oxygen Precipitation Process in CZ-Si by Luminescence Activation Using Electron Irradiation

△ [15p-A23-20] Characterization of GaN crystals with the X-ray topography (2)

[16a-P6-1~9] 15.8 Crystal evaluation, impurities and crystal defects

△ [16a-P6-3] First principles analysis on Frenkel pair formation from oxygen clusters in Si crystals

△ [16a-P6-4] First principle analysis of intrinsic point defect formation in stressed single Ge crystal

△ [16a-P6-5] Combined impacts of thermal stress and doping on the incorporation of intrinsic point defects in growing single crystal Si

Authentication