[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-7] Annihilation behavior of void defects in nitrogen doped Cz-Si wafers by ultrahigh-temperature RTP

〇Haruo Sudo¹, Koji Araki¹, Tatsuhiko Aoki¹, Takeshi Senda¹, Susumu Maeda¹ (1.GlobalWafers Japan)

Keywords:RTP, Void Defect