Annihilation behavior of oxygen precipitate nuclei in nitrogen doped Cz-silicon wafers by ultrahigh-temperature RTP

Hideyuki Okamura; Haruo Sudo; Koji Araki; Hiroyuki Saito; Susumu Maeda; Koji Sueoka; Kozo Nakamura

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[15a-A23-1~10] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Sep 15, 2016 9:00 AM - 11:45 AM A23 (201B)

Kentaro Kutsukake(Tohoku Univ.), Hiroki Kawai(Toshiba)

11:00 AM - 11:15 AM

[15a-A23-8] Annihilation behavior of oxygen precipitate nuclei in nitrogen doped Cz-silicon wafers by ultrahigh-temperature RTP

〇Hideyuki Okamura¹, Haruo Sudo¹, Koji Araki¹, Hiroyuki Saito¹, Susumu Maeda¹, Koji Sueoka², Kozo Nakamura³ (1.GlobalWafers Japan, 2.Faculty of Computer Science and System Engineering, Okayama Pref. Univ., 3.Regional Cooperative Research Organization, Okayama Pref. Univ.)

Keywords:RTP, Oxygen precipitate nuclei, Interstitial silicon