The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

Thu. Sep 15, 2016 9:00 AM - 12:30 PM B1 (Exhibition Hall)

Kenji Shiojima(Univ. of Fukui)

12:00 PM - 12:15 PM

[15a-B1-12] A current stress fatigue test of GaN p-n diodes fabricated on GaN substrates

FUMIMASA HORIKIRI1, HIROSHI OHTA2, YOSHINOBU NARITA1, TAKEHIRO YOSHIDA1, TOSHIO KITAMURA1, TOHRU NAKAMURA2, TOMOYOSHI MISHIMA2 (1.Sciocs Co. Ltd., 2.Hosei Univ.)

Keywords:GaN, diode, fatigue test

In this study, a current stress fatigue test was carried out for GaN p-n diodes, which were grown on the free-standing GaN substrate by MOVPE. The diodes had the MESA structure by ICP-RIE, SiO2 passivation, and the field plate. The current stress was controlled by the current compliance in the range from 10-7 to 10-3 [A]. No degradation occurred by the current stress of 10-7 [A]. The breakdown voltage decreased by the current stress over 10-6 [A]. Finally, the diode was short after the stress test of 10-3 [A]. The degradation profile did not relate to the diameter of the diode. And the initial leakage level did not small. These results indicate that the ICP-RIE damage of the MESA edge strongly affects to the reliability on the current stress fatigue test.