[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

[15a-B1-12] A current stress fatigue test of GaN p-n diodes fabricated on GaN substrates

〇FUMIMASA HORIKIRI¹, HIROSHI OHTA², YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹, TOSHIO KITAMURA¹, TOHRU NAKAMURA², TOMOYOSHI MISHIMA² (1.Sciocs Co. Ltd., 2.Hosei Univ.)

Keywords:GaN, diode, fatigue test

In this study, a current stress fatigue test was carried out for GaN p-n diodes, which were grown on the free-standing GaN substrate by MOVPE. The diodes had the MESA structure by ICP-RIE, SiO₂ passivation, and the field plate. The current stress was controlled by the current compliance in the range from 10^-7 to 10^-3 [A]. No degradation occurred by the current stress of 10^-7 [A]. The breakdown voltage decreased by the current stress over 10^-6 [A]. Finally, the diode was short after the stress test of 10^-3 [A]. The degradation profile did not relate to the diameter of the diode. And the initial leakage level did not small. These results indicate that the ICP-RIE damage of the MESA edge strongly affects to the reliability on the current stress fatigue test.