The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 9:00 AM - 11:15 AM B3 (Exhibition Hall)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

10:15 AM - 10:30 AM

[15a-B3-6] Characterization of undoped-BaSi2 on textured Si (001) substrate grown by molecular beam epitaxy

Tianguo Deng1, Ryota Takabe1, Suguru Yachi1, Zhihao Xu1, Miftahullatif Emha Bayu1, Kaoru Toko1, Noritaka Usami2, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Nagoya Univ.)

Keywords:barium disilicide, textured substrate

Barium disilicide (BaSi2) has attractive features for solar cell application such as a suitable band, and a large minority-carrier lifetime (τ ~ 10 μs) and a large minority-carrier diffusion length (L ~ 10 μm). Power conversion efficiency (η) was expected to be larger than 25% only in a 2-μm-thick BaSi2 pn junction diode. To ensure both light-trapping and epitaxy of BaSi2 on Si(111) faces, textured Si(001) substrates with Si(111) faces were formed. In this study, we attempted to grow BaSi2 on such a textured Si(001) substrate, and compared with the results obtained for BaSi2 on Si(111).