Oral presentation

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 9:00 AM - 11:15 AM B3 (Exhibition Hall)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-B3-1] Optimization for synthesis of precursor of Na-doped type II Si clathrate films

〇(M2)Masafumi Sakagami¹, Shingo Ito¹, Tomoya Fujioka¹, Fumitaka Ohashi¹, Takayuki Ban¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

9:15 AM - 9:30 AM

[15a-B3-2] A new synthesis method of Si clathrate film: Precursor film made by melting of NaSi

〇Taku Kozaka¹, Humitaka Ohashi¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

9:30 AM - 9:45 AM

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P⁺ and Sb⁺ ions

〇(M1)Shunya Sakai¹, Kazuya Yamamura¹, Hiroshi Nishigaki¹, Noriyuki Hasuike¹, Hiroshi Harima¹, Woo Sik Yoo² (1.Kyoto Inst. of Tech, 2.WaferMasters Inc.)

9:45 AM - 10:00 AM

[15a-B3-4] Search of the manufacturing conditions in the film quality improvement of Na contained type II clsthrate films

〇(M2)Tetsuya Mukai¹, Nanto Sugii¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Himanshu Shekher Jha¹, Shuichi Nonomura¹ (1.Gifu Univ.)

10:00 AM - 10:15 AM

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge₁₃₆)

〇Shota Suzuki¹, Tetsuji Kume¹, Humitaka Ohashi¹, Shuichi Nonomura¹ (1.Gifu Univ.)

10:15 AM - 10:30 AM

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

〇Tianguo Deng¹, Ryota Takabe¹, Suguru Yachi¹, Zhihao Xu¹, Miftahullatif Emha Bayu¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Nagoya Univ.)

10:30 AM - 10:45 AM

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

〇Zhihao Xu¹, Tianguo Deng¹, Ryota Takabe¹, Miftahullatif Emha Bayu¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:45 AM - 11:00 AM

[15a-B3-8] Fabrication of a-Si/BaSi₂ stacked structure by thermal evaporation using a single source

〇Kosuke Hara¹, Cham Thi Trinh², Yasuyoshi Kurokawa², Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami² (1.Univ. Yamanashi, 2.Nagoya Univ.)

11:00 AM - 11:15 AM

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si films

〇(M1)Hideyuki Wada¹, Takehiro Suzuki¹, Gou Yasuda¹, Hiroshi Katsumata¹, Tomoharu Kataoka², Hidenari Yamamoto², Shinsuke Hirono², Mamoru Ishikiriyama² (1.Meiji Univ., 2.Toyota Motor Corp.)

Oral presentation

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 1:45 PM - 4:45 PM B3 (Exhibition Hall)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[15p-B3-1] Cross-sectional Analysis of BaSi₂/SUS304 Deposited by Vacuum Evaporation

〇Takamichi Suhara¹, Kenta Aoyagi¹, Kosuke O. Hara², Takashi Suemasu³, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.Univ. of Tsukuba)

2:00 PM - 2:15 PM

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

〇Masaya Fuchi¹, Mikihiro Arima¹, Yoshikazu Terai¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (1.Kyutech, 2.QST-QuBS)

2:15 PM - 2:30 PM

[15p-B3-3] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra (II)

〇Naoki Murakoso¹, Motoki Iinuma¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyushu Inst. of Tech., 2.Univ. of Tsukuba)

2:30 PM - 2:45 PM

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi₂

〇Akito Nagasawa¹, Nakayama Takashi¹, Oosuga Yuki¹ (1.Chiba Univ.)

2:45 PM - 3:00 PM

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

〇Mikihiro Arima¹, Masaya Fuchi¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (1.Kyutech, 2.QST)

3:00 PM - 3:15 PM

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi₂ epitaxial films

〇Motoki Iinuma¹, Naoki Murakoso¹, Shuya Ikeda¹, kazuya Ogi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

3:15 PM - 3:30 PM

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

〇Mao Kurokawa¹, Mutsuo Uehara¹, Takao Shimizu¹, Kensuke Akiyama^1,2, Masaaki Matsushima¹, Hiroshi Uchida³, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Institute of Technology, 2.Kanagawa Industrial Technology Center, 3.Sophia Univ.)

3:30 PM - 3:45 PM

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

〇Yuma Onizawa¹, Tomohiro Akiyama¹, Tatsuya Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

3:45 PM - 4:00 PM

[15p-B3-9] Dependence of p-BaSi₂/n-Si solar cells performance on p-BaSi₂ layer thickness

〇Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:00 PM - 4:15 PM

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

〇Ryota Takabe¹, Suguru Yachi¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

4:15 PM - 4:30 PM

[15p-B3-11] Application of hole selective BaSi₂ contact for Si heterojunction solar cells

〇(M1)Kazuma Takahashi¹, Yoshihiko Nakagawa¹, Kosuke Hara², Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ., 2.Univ. of Yamanashi)

4:30 PM - 4:45 PM

[15p-B3-12] Device Structure Optimization of BaSi₂ solar cells via Drift-Diffusion Simulations

〇Atsuya Sasaki¹, Akito Sasaki¹, Yoshinori Kataoka¹, Akira Sato¹, Hideaki Hirabayashi¹, Shuichi Saito¹, Kumpei Kobayashi¹, Shigeyuki Takagi², Nobuyuki Sano³ (1.Toshiba Materials, 2.Tokyo Univ. of Tech., 3.Univ. of Tsukuba)

Poster presentation

[16a-P3-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 16, 2016 9:30 AM - 11:30 AM P3 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[16a-P3-1] Photoreflectance spectra in β-FeSi₂/Si polycrystalline films with low electron density

〇Kazuya Ogi¹, Syuya Ikeda¹, Motoki Iinuma¹, Naoki Murakoso¹, Yoshikazu Terai¹ (1.Kyusyu Inst. of tech.)

9:30 AM - 11:30 AM

[16a-P3-2] PL spectra of β-FeSi₂ polycrystalline films grown by magnetron sputtering method

〇Shuya Ikeda¹, Kazuya Ogi¹, Motoki Iinuma¹, Naoki Murakoso¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:30 AM - 11:30 AM

[16a-P3-3] Temperature-dependent Interlayer Coupling in Fe₃Si/FeSi₂ Superlattices

〇Tsuyoshi Yoshitake¹, Satoishi Takeichi¹, Takayasu Hanashima², Noboru Miyata², Ken-ichiro Sakai³, Hiroyuki Deguchi⁴ (1.Kyushu Univ., 2.CROSS Tokai, 3.Kurume NCT, 4.Kyushu Inst. Tech.)

9:30 AM - 11:30 AM

▲ [16a-P3-4] Possibility of fabricating n-BaSi₂/p type multicrystalline Si (p-mc-Si) heterojunction solar cells

〇YUNPENG LI¹, Ryota Takabe¹, Tianguo Deng¹, Zhihao Xu¹, Kaoru Toko¹, Takashi Sekiguchi², Takashi Suemasu¹ (1.Univ. Tsukuba, 2.NIMS)

9:30 AM - 11:30 AM

▲ [16a-P3-5] Minority-carrier lifetime in B-doped BaSi₂ epitaxial films

〇(M1)Emha Bayu Miftahullatif¹, Cham Thi Trinh², Takabe Ryota¹, Yachi Suguru¹, Toko Kaoru¹, Usami Noritaka², Suemasu Takashi¹ (1.Univ. of Tsukuba, 2.Nagoya Univ)

9:30 AM - 11:30 AM

[16a-P3-6] Effect of annealing on carrier density of Mg₂Si bulk crystal

〇Kohei Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:30 AM - 11:30 AM

[16a-P3-7] Electrical and optical property of mesa-structured Mg₂Si photodiode with ring electrode

〇Tatsuya Nakano¹, Tomohiro Akiyama¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

9:30 AM - 11:30 AM

[16a-P3-8] Light absorption characteristics of GaAsN layers grown by RF-MBE

〇Takuya Kurosawa¹, Takuya Osaka¹, Ryuki Taniguchi¹, Akimi Yamane¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ, 2.NIT, Ichinoseki College)

9:30 AM - 11:30 AM

[16a-P3-9] Evaluation of GaAsN/GaAs using Photoluminescence and X-ray Reciprocal Space Mapping

〇Takuya Odaka¹, Takuya Kurosawa¹, Ryuki Taniguchi¹, Akimi Yamane¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

9:30 AM - 11:30 AM

[16a-P3-10] Electron transport characteristic of graphene on hexagonal boron nitride substrate

〇Yuya Sotoda¹, Hideki Hirai¹, Satofumi Souma¹, Matsuto Ogawa¹ (1.Kobe Univ.)

9:30 AM - 11:30 AM

[16a-P3-11] Synthesis and photocatalytic activity of Spinel MBi₂O₄(M=Cu,Zn)

〇(M1)Shogo Sumizono¹, Takuya Suzuki¹ (1.Univ.Kitakyushu)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1] Optimization for synthesis of precursor of Na-doped type II Si clathrate films

[15a-B3-2] A new synthesis method of Si clathrate film: Precursor film made by melting of NaSi

[15a-B3-3] The effect of laser annealing for Ge thin films implanted with P⁺ and Sb⁺ ions

[15a-B3-4] Search of the manufacturing conditions in the film quality improvement of Na contained type II clsthrate films

[15a-B3-5] Synthesis of thin film of guest free type ll Ge clathrate (Ge₁₃₆)

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

[15a-B3-8] Fabrication of a-Si/BaSi₂ stacked structure by thermal evaporation using a single source

[15a-B3-9] The influence of Ag doping and the effect of two-step annealing on the solid phase growth of Mg₂Si films

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1] Cross-sectional Analysis of BaSi₂/SUS304 Deposited by Vacuum Evaporation

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

[15p-B3-3] Analysis of vibrational modes in BaSi₂ by polarized Raman spectra (II)

[15p-B3-4] First-principles study on stability and diffusion of ionized impurity atom in BaSi₂

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

[15p-B3-6] Correlation between direct transition energies and electrical properties in β-FeSi₂ epitaxial films

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

[15p-B3-9] Dependence of p-BaSi₂/n-Si solar cells performance on p-BaSi₂ layer thickness

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

[15p-B3-11] Application of hole selective BaSi₂ contact for Si heterojunction solar cells

[15p-B3-12] Device Structure Optimization of BaSi₂ solar cells via Drift-Diffusion Simulations

[16a-P3-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-P3-1] Photoreflectance spectra in β-FeSi₂/Si polycrystalline films with low electron density

[16a-P3-2] PL spectra of β-FeSi₂ polycrystalline films grown by magnetron sputtering method

[16a-P3-3] Temperature-dependent Interlayer Coupling in Fe₃Si/FeSi₂ Superlattices

▲ [16a-P3-4] Possibility of fabricating n-BaSi₂/p type multicrystalline Si (p-mc-Si) heterojunction solar cells

▲ [16a-P3-5] Minority-carrier lifetime in B-doped BaSi₂ epitaxial films

[16a-P3-6] Effect of annealing on carrier density of Mg₂Si bulk crystal

[16a-P3-7] Electrical and optical property of mesa-structured Mg₂Si photodiode with ring electrode

[16a-P3-8] Light absorption characteristics of GaAsN layers grown by RF-MBE

[16a-P3-9] Evaluation of GaAsN/GaAs using Photoluminescence and X-ray Reciprocal Space Mapping

[16a-P3-10] Electron transport characteristic of graphene on hexagonal boron nitride substrate

[16a-P3-11] Synthesis and photocatalytic activity of Spinel MBi₂O₄(M=Cu,Zn)

Authentication

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15a-B3-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [15a-B3-6] Characterization of undoped-BaSi2 on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi2 films on Si(111) by molecular beam epitaxy

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [15p-B3-2] Study of MBE-β-FeSi2/Si hetero-epitaxy using Ion Multiple Scattering

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi2/Si Nanocomposite

△ [15p-B3-7] Annealing effects on conduction type in Mg2Si thin films

△ [15p-B3-8] Optical properties of Mg2Si pn-diodes by back-illumination

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

[16a-P3-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [16a-P3-4] Possibility of fabricating n-BaSi2/p type multicrystalline Si (p-mc-Si) heterojunction solar cells

▲ [16a-P3-5] Minority-carrier lifetime in B-doped BaSi2 epitaxial films

Authentication

▲ [15a-B3-6] Characterization of undoped-BaSi₂ on textured Si (001) substrate grown by molecular beam epitaxy

▲ [15a-B3-7] Fabrication of nitrogen-doped BaSi₂ films on Si(111) by molecular beam epitaxy

△ [15p-B3-2] Study of MBE-β-FeSi₂/Si hetero-epitaxy using Ion Multiple Scattering

△ [15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi₂/Si Nanocomposite

△ [15p-B3-7] Annealing effects on conduction type in Mg₂Si thin films

△ [15p-B3-8] Optical properties of Mg₂Si pn-diodes by back-illumination

△ [15p-B3-10] Effect of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi₂/n-Si heterojunction solar cells

▲ [16a-P3-4] Possibility of fabricating n-BaSi₂/p type multicrystalline Si (p-mc-Si) heterojunction solar cells

▲ [16a-P3-5] Minority-carrier lifetime in B-doped BaSi₂ epitaxial films