The 77th JSAP Autumn Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-B3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 15, 2016 1:45 PM - 4:45 PM B3 (Exhibition Hall)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

2:45 PM - 3:00 PM

[15p-B3-5] Diffusion Analysis of Oxidation Process in β-FeSi2/Si Nanocomposite

Mikihiro Arima1, Masaya Fuchi1, Kazumasa Narumi2, Yoshihito Maeda1,2 (1.Kyutech, 2.QST)

Keywords:beta-FeSi2, oxidation, light emission

In order to overcome the most disadvantage of β-FeSi2/Si (β/Si) nanocomposite for light emission efficiency, β-FeSi2/SiO2 composites promising for efficient confinement of electrons and holes was proposed and synthesized by selective oxidation taking place in the β/Si composite. In the oxidized composite, we observed clear photoluminescence at 250 K. In this study, we investigated details of the oxidation processes from the β/Si composite to the β/SiO2 composite by using RBS analysis and was discussed using element diffusion flux.