[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-11] Formation and Removal of Carbon Film on Silicon Carbide Surface Using Chlorine Trifluoride Gas

Asumi Hirooka¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo, 3.AIST)

Keywords:Silicon carbide, Chlorine trifluoride gas, carbon film

During the silicon carbide etching using chlorine trifluoride gas, the carbon film is often formed at the silicon carbide substrate surface. Its formation mechanism and the removal technique was studied.