[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-9] Development of high-speed SiC laser slicing technology

〇Kazuya Hirata¹, Yoko Nishino¹, Yukio Morishige¹, Kunimitsu Takahashi¹ (1.DISCO Corporation)

Keywords:laser, slice

A multi-slurry wire saw has been utilized as a slicing technique of a SiC ingot. A wire saw technique is requiring to improve process speed and material loss reduction. Therefore, we developed a laser SiC slicing process (KABRA process) based on novel process principle to improve those problems. In this process, flat shaped thermal dissociation zone perpendicular to a laser incident direction is formed by internal laser focusing. This flat shaped zone expand thermally, and then a huge crack produced along a SiC cleavage face beside the flat shaped zone. This new process is able to slice a 6 inch SiC wafer only for 12 min with less material loss than wire process.