[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-12] Sensitivity and detection limit of carbon concentration measurement in silicon crystal

〇Naohisa Inoue^2,1 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Sensitivity and detection limit of carbon concentration measurement in silicon crystal is discussed. Infrared absorption (IR), secondary ion mass spectrometry (SIMS) and charged particle activation analysis (CPAA) have succeeded in measurement down to 1E+14 cm-3. Suitable range of measurement by the test method is considered to be 1E+14cm-3, both from the requirement from crystal as well as power device vendors and ability of measurement engineers. IR potential was confirmed to be 1E+12cm-3 and the way to realize 1E+13cm-3 was examined.